Browsing by Author "Böttcher, K."
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- ItemComputational Simulations of the Lateral-Photovoltage-Scanning-Method(London [u.a.] : Institute of Physics, 2018) Kayser, S.; Lüdge, A.; Böttcher, K.The major task for the Lateral-Photovoltage-Scanning-Method is to detect doping striations and the shape of the solid-liquid-interface of an indirect semiconductor crystal. This method is sensitive to the gradient of the charge carrier density. Attempting to simulate the signal generation of the LPS-Method, we are using a three dimensional Finite Volume approach for solving the van Roosbroeck equations with COMSOL Multiphysics in a silicon sample. We show that the simulated LPS-voltage is directly proportional to the gradient of a given doping distribution, which is also the case for the measured LPS-voltage.
- ItemGrundlegende Untersuchungen zur Herstellung perfekter, N-dotierter 4H-SiC-Einkristalle hoher Leitfähigkeit und zum Dotierungseinfluss auf den Waferingprozess : Abschlussbericht(Hannover : Technische Informationsbibliothek (TIB), 2003) Siche, D.; Rost, H.-J.; Schulz, D.; Wollweber, J.; Freiberg, A.; Schäbitz, K.; Lux, B.; Wurche, T.; Böttcher, K.; Doerschel, J.; Irmscher, K.; Alex, V.; Wagner, G.[no abstract available]