Browsing by Author "Bischoff, L."

Now showing 1 - 3 of 3
  • Thumbnail Image
    Item
    Experimental and computational investigations of electron dynamics in micro atmospheric pressure radio-frequency plasma jets operated in He/N2 mixtures
    (Bristol : IOP Publ., 2018) Bischoff, L.; Hübner, G.; Korolov, I.; Donkó, Z.; Hartmann, P.; Gans, T.; Held, J.; Schulz-von der Gathen, V.; Liu, Y; Mussenbrock, T.; Schulze, J.
    The electron power absorption dynamics in radio frequency driven micro atmospheric pressure capacitive plasma jets are studied based on experimental phase resolved optical emission spectroscopy and the computational particle in cell simulations with Monte Carlo treatment of collisions. The jet is operated at 13.56 MHz in He with different admixture concentrations of N 2 and at several driving voltage amplitudes. We find the spatio-temporal dynamics of the light emission of the plasma at various wavelengths to be markedly different. This is understood by revealing the population dynamics of the upper levels of selected emission lines/bands based on comparisons between experimental and simulation results. The populations of these excited states are sensitive to different parts of the electron energy distribution function and to contributions from other excited states. Mode transitions of the electron power absorption dynamics from the Ω- to the Penning-mode are found to be induced by changing the N 2 admixture concentration and the driving voltage amplitude. Our numerical simulations reveal details of this mode transition and provide novel insights into the operation details of the Penning-mode. The characteristic excitation/emission maximum at the time of maximum sheath voltage at each electrode is found to be based on two mechanisms: (i) a direct channel, i.e. excitation/emission caused by electrons generated by Penning ionization inside the sheaths and (ii) an indirect channel, i.e. secondary electrons emitted from the electrode due to the impact of positive ions generated by Penning ionization at the electrodes.
  • Thumbnail Image
    Item
    Magnetosensitive e-skins with directional perception for augmented reality
    (Washington : American Association for the Advancement of Science (A A A S), 2018) Cañón Bermúdez, G.S.; Karnaushenko, D.D.; Karnaushenko, D.; Lebanov, A.; Bischoff, L.; Kaltenbrunner, M.; Fassbender, J.; Schmidt, O.G.; Makarov, D.
    Electronic skins equipped with artificial receptors are able to extend our perception beyond the modalities that have naturally evolved. These synthetic receptors offer complimentary information on our surroundings and endow us with novel means of manipulating physical or even virtual objects. We realize highly compliant magnetosensitive skins with directional perception that enable magnetic cognition, body position tracking, and touchless object manipulation. Transfer printing of eight high-performance spin valve sensors arranged into two Wheatstone bridges onto 1.7-mm-thick polyimide foils ensures mechanical imperceptibility. This resembles a new class of interactive devices extracting information from the surroundings through magnetic tags. We demonstrate this concept in augmented reality systems with virtual knob-turning functions and the operation of virtual dialing pads, based on the interaction with magnetic fields. This technology will enable a cornucopia of applications from navigation, motion tracking in robotics, regenerative medicine, and sports and gaming to interaction in supplemented reality.
  • Thumbnail Image
    Item
    Site-controlled formation of single Si nanocrystals in a buried SiO2 matrix using ion beam mixing
    (Frankfurt am Main : Beilstein-Institut zur Förderung der Chemischen Wissenschaften, 2018) Xu, X.; Prüfer, T.; Wolf, D.; Engelmann, H.-J.; Bischoff, L.; Hübner, R.; Heinig, K.-H.; Möller, W.; Facsko, S.; von Borany, J.; Hlawacek, G.
    For future nanoelectronic devices - such as room-temperature single electron transistors - the site-controlled formation of single Si nanocrystals (NCs) is a crucial prerequisite. Here, we report an approach to fabricate single Si NCs via medium-energy Si+ or Ne+ ion beam mixing of Si into a buried SiO2 layer followed by thermally activated phase separation. Binary collision approximation and kinetic Monte Carlo methods are conducted to gain atomistic insight into the influence of relevant experimental parameters on the Si NC formation process. Energy-filtered transmission electron microscopy is performed to obtain quantitative values on the Si NC size and distribution in dependence of the layer stack geometry, ion fluence and thermal budget. Employing a focused Ne+ beam from a helium ion microscope, we demonstrate site-controlled self-assembly of single Si NCs. Line irradiation with a fluence of 3000 Ne+/nm2 and a line width of 4 nm leads to the formation of a chain of Si NCs, and a single NC with 2.2 nm diameter is subsequently isolated and visualized in a few nanometer thin lamella prepared by a focused ion beam (FIB). The Si NC is centered between the SiO2 layers and perpendicular to the incident Ne+ beam.