Browsing by Author "Kleemann, Hans"
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- ItemHighly efficient modulation doping: A path toward superior organic thermoelectric devices(Washington, DC [u.a.] : Assoc., 2022) Wang, Shu-Jen; Panhans, Michel; Lashkov, Ilia; Kleemann, Hans; Caglieris, Federico; Becker-Koch, David; Vahland, Jörn; Guo, Erjuan; Huang, Shiyu; Krupskaya, Yulia; Vaynzof, Yana; Büchner, Bernd; Ortmann, Frank; Leo, KarlWe investigate the charge and thermoelectric transport in modulation-doped large-area rubrene thin-film crystals with different crystal phases. We show that modulation doping allows achieving superior doping efficiencies even for high doping densities, when conventional bulk doping runs into the reserve regime. Modulation-doped orthorhombic rubrene achieves much improved thermoelectric power factors, exceeding 20 μW m−1 K−2 at 80°C. Theoretical studies give insight into the energy landscape of the heterostructures and its influence on qualitative trends of the Seebeck coefficient. Our results show that modulation doping together with high-mobility crystalline organic semiconductor films is a previosly unexplored strategy for achieving high-performance organic thermoelectrics.
- ItemUnraveling Structure and Device Operation of Organic Permeable Base Transistors(Weinheim : Wiley-VCH, 2020) Darbandy, Ghader; Dollinger, Felix; Formánek, Petr; Hübner, René; Resch, Stefan; Roemer, Christian; Fischer, Axel; Leo, Karl; Kloes, Alexander; Kleemann, HansOrganic permeable base transistors (OPBTs) are of great interest for flexible electronic circuits, as they offer very large on-current density and a record-high transition frequency. They rely on a vertical device architecture with current transport through native pinholes in a central base electrode. This study investigates the impact of pinhole density and pinhole diameter on the DC device performance in OPBTs based on experimental data and TCAD simulation results. A pinhole density of NPin = 54 µm−2 and pinhole diameters around LPin = 15 nm are found in the devices. Simulations show that a variation of pinhole diameter and density around these numbers has only a minor impact on the DC device characteristics. A variation of the pinhole diameter and density by up to 100% lead to a deviation of less than 4% in threshold voltage, on/off current ratio, and sub-threshold slope. Hence, the fabrication of OPBTs with reliable device characteristics is possible regardless of statistical deviations in thin film formation. © 2020 The Authors. Published by WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
- ItemVertical organic permeable dual-base transistors for logic circuits([London] : Nature Publishing Group UK, 2020) Guo, Erjuan; Wu, Zhongbin; Darbandy, Ghader; Xing, Shen; Wang, Shu-Jen; Tahn, Alexander; Göbel, Michael; Kloes, Alexander; Leo, Karl; Kleemann, HansThe main advantage of organic transistors with dual gates/bases is that the threshold voltages can be set as a function of the applied second gate/base bias, which is crucial for the application in logic gates and integrated circuits. However, incorporating a dual gate/base structure into an ultra-short channel vertical architecture represents a substantial challenge. Here, we realize a device concept of vertical organic permeable dual-base transistors, where the dual base electrodes can be used to tune the threshold voltages and change the on-currents. The detailed operation mechanisms are investigated by calibrated TCAD simulations. Finally, power-efficient logic circuits, e.g. inverter, NAND/AND computation functions are demonstrated with one single device operating at supply voltages of <2.0 V. We believe that this work offers a compact and technologically simple hardware platform with excellent application potential for vertical-channel organic transistors in complex logic circuits.