Browsing by Author "Markurt, Toni"
Now showing 1 - 4 of 4
Results Per Page
Sort Options
- ItemFast Raman mapping and in situ TEM observation of metal induced crystallization of amorphous silicon(Berlin : Weierstraß-Institut für Angewandte Analysis und Stochastik, 2020) Uebel, David; Kayser, Stefan; Markurt, Toni; Ernst, Owen C.; Teubner, Thomas; Boeck, TorstenCrystalline silicon is grown onto an amorphous silicon (a-Si) seed layer from liquid tin solution (steady state liquid phase epitaxy, SSLPE). To investigate the crystallization of embedded a-Si during our process, we adapted Raman measurements for fast mapping, with dwell times of just one second per single measurement. A purposely developed imaging algorithm which performs point-by-point gauss fitting provides adequate visualization of the data. We produced scans of a-Si layers showing crystalline structures formed in the a-Si matrix during processing. Compared to scanning electron microscopy images which reveal merely the topography of the grown layer, new insights are gained into the role of the seed layer by Raman mapping. As part of a series of SSLPE experiments, which were interrupted at various stages of growth, we show that plate-like crystallites grow laterally over the a-Si layer while smaller, randomly orientated crystals arise from the a-Si layer. Results are confirmed by an in situ TEM experiment of the metal-induced crystallization. Contrary to presumptions, initially formed surface crystallites do not originate from the seed layer and are irrelevant to the final growth morphology, since they dissolve within minutes due to Ostwald ripening. The a-Si layer crystallizes within minutes as well, and crystallites of the final morphology originate from seeds of this layer.
- ItemHeteroepitaxial growth of T-Nb2O5 on SrTiO3(Basel : MDPI, 2018) Boschker, Jos E.; Markurt, Toni; Albrecht, Martin; Schwarzkopf, JuttaThere is a growing interest in exploiting the functional properties of niobium oxides in general and of the T-Nb2O5 polymorph in particular. Fundamental investigations of the properties of niobium oxides are, however, hindered by the availability of materials with sufficient structural perfection. It is expected that high-quality T-Nb2O5 can be made using heteroepitaxial growth. Here, we investigated the epitaxial growth of T-Nb2O5 on a prototype perovskite oxide, SrTiO3. Even though there exists a reasonable lattice mismatch in one crystallographic direction, these materials have a significant difference in crystal structure: SrTiO3 is cubic, whereas T-Nb2O5 is orthorhombic. It is found that this difference in symmetry results in the formation of domains that have the T-Nb2O5 c-axis aligned with the SrTiO3 <001>s in-plane directions. Hence, the number of domain orientations is four and two for the growth on (100)s- and (110)s-oriented substrates, respectively. Interestingly, the out-of-plane growth direction remains the same for both substrate orientations, suggesting a weak interfacial coupling between the two materials. Despite challenges associated with the heteroepitaxial growth of T-Nb2O5, the T-Nb2O5 films presented in this paper are a significant improvement in terms of structural quality compared to their polycrystalline counterparts.
- ItemPolarity Control in Group-III Nitrides beyond Pragmatism(College Park, Md. [u.a.] : American Physical Society, 2016) Mohn, Stefan; Stolyarchuk, Natalia; Markurt, Toni; Kirste, Ronny; Hoffmann, Marc P.; Collazo, Ramón; Courville, Aimeric; Di Felice, Rosa; Sitar, Zlatko; Vennéguès, Philippe; Albrecht, MartinControlling the polarity of polar semiconductors on nonpolar substrates offers a wealth of device concepts in the form of heteropolar junctions. A key to realize such structures is an appropriate buffer-layer design that, in the past, has been developed by empiricism. GaN or ZnO on sapphire are prominent examples for that. Understanding the basic processes that mediate polarity, however, is still an unsolved problem. In this work, we study the structure of buffer layers for group-III nitrides on sapphire by transmission electron microscopy as an example. We show that it is the conversion of the sapphire surface into a rhombohedral aluminum-oxynitride layer that converts the initial N-polar surface to Al polarity. With the various AlxOyNz phases of the pseudobinary Al2O3-AlN system and their tolerance against intrinsic defects, typical for oxides, a smooth transition between the octahedrally coordinated Al in the sapphire and the tetrahedrally coordinated Al in AlN becomes feasible. Based on these results, we discuss the consequences for achieving either polarity and shed light on widely applied concepts in the field of group-III nitrides like nitridation and low-temperature buffer layers.
- ItemVerbundprojekt: Effiziente, kostengünstige InGaN-Lichtquellen auf Silizium-Substraten für die Allgemeinbeleuchtung, Teilvorhaben: Elektronenmikroskopische Charakterisierung und Modellierung von Versetzungsprozessen von InGaN-Lichtquellen auf Si-Substraten : Schlussbericht ; Laufzeit des Vorhabens: 01.02.2009 - 31.01.2012(Hannover : Technische Informationsbibliothek (TIB), 2012) Albrecht, Martin; Schulz, Tobias; Markurt, Toni; Remmele, Thilo[no abstract available]