Browsing by Author "Varykhalov, A."
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- ItemLifshitz transition in titanium carbide driven by a graphene overlayer(College Park, MD : APS, 2023) Krivenkov, M.; Marchenko, D.; Golias, E.; Sajedi, M.; Frolov, A.S.; Sánchez-Barriga, J.; Fedorov, A.; Yashina, L.V.; Rader, O.; Varykhalov, A.Two-dimensional (2D) Dirac materials are electronically and structurally very sensitive to proximity effects. We demonstrate, however, the opposite effect: that the deposition of a monolayer 2D material could exercise a substantial influence on the substrate electronic structure. Here we investigate TiC(111) and show that a graphene overlayer produces a proximity effect, changing the Fermi surface topology of the TiC from six electron pockets to one hole pocket on the depth of several atomic layers inside the substrate. In addition, the graphene electronic structure undergoes an extreme modification as well. While the Dirac cone remains gapless, it experiences an energy shift of 1.0 eV beyond what was recently achieved for the Lifshitz transition of overdoped graphene. Due to this shift, the antibonding π∗ band at the M¯ point becomes occupied and observable by photoemission.
- ItemMomentum-resolved superconducting gap in the bulk of Ba1-xK xFe2As2 from combined ARPES and μSR measurements(Milton Park : Taylor & Francis, 2009) Evtushinsky, D.V.; Inosov, D.S.; Zabolotnyy, V.B.; Viazovska, M.S.; Khasanov, R.; Amato, A.; Klauss, H.-H.; Luetkens, H.; Niedermayer, Ch.; Sun, G.L.; Hinkov, V.; Lin, C.T.; Varykhalov, A.; Koitzsch, A.; Knupfer, M.; Büchner, B.; Kordyuk, A.A.; Borisenko, S.V.Here we present a calculation of the temperature-dependent London penetration depth, λ(T), in Ba1-xKxFe 2As2 (BKFA) on the basis of the electronic band structure (Zabolotnyy et al 2009 Nature 457 569, Zabolotnyy et al 2009 Physica C 469 448) and momentum-dependent superconducting gap (Evtushinsky et al 2009 Phys. Rev. B 79 054517) extracted from angleresolved photoemission spectroscopy (ARPES) data. The results are compared to the direct measurements of λ(T) by muon spin rotation (μSR) (Khasanov et al 2009 Phys. Rev. Lett. 102 187005). The value of λ(T = 0), calculated with no adjustable parameters, equals 270 nm, while the directly measured one is 320 nm; the temperature dependence λ(T) is also easily reproduced. Such agreement between the two completely different approaches allows us to conclude that ARPES studies of BKFA are bulk-representative. Our review of the available experimental studies of the superconducting gap in the new ironbased superconductors in general allows us to state that most of them bear two nearly isotropic gaps with coupling constants 2ΔkBTc = 2.5±1.5 and 7±2.
- ItemPhotoemission of Bi2Se3 with circularly polarized light: Probe of spin polarization or means for spin manipulation?(College Park : American Institute of Physics Inc., 2014) Sánchez-Barriga, J.; Varykhalov, A.; Braun, J.; Xu, S.-Y.; Alidoust, N.; Kornilov, O.; Minár, J.; Hummer, K.; Springholz, G.; Bauer, G.; Schumann, R.; Yashina, L.V.; Ebert, H.; Hasan, M.Z.; Rader, O.Topological insulators are characterized by Dirac-cone surface states with electron spins locked perpendicular to their linear momenta. Recent theoretical and experimental work implied that this specific spin texture should enable control of photoelectron spins by circularly polarized light. However, these reports questioned the so far accepted interpretation of spin-resolved photoelectron spectroscopy.We solve this puzzle and show that vacuum ultraviolet photons (50-70 eV) with linear or circular polarization indeed probe the initial-state spin texture of Bi2Se3 while circularly polarized 6-eV low-energy photons flip the electron spins out of plane and reverse their spin polarization, with its sign determined by the light helicity. Our photoemission calculations, taking into account the interplay between the varying probing depth, dipole-selection rules, and spin-dependent scattering effects involving initial and final states, explain these findings and reveal proper conditions for light-induced spin manipulation. Our results pave the way for future applications of topological insulators in optospintronic devices.