Browsing by Author "Wolff, Andre"
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- ItemPerfluorodecyltrichlorosilane-based seed-layer for improved chemical vapour deposition of ultrathin hafnium dioxide films on graphene(London : Nature Publishing Group, 2016) Kitzmann, Julia; Göritz, Alexander; Fraschke, Mirko; Lukosius, Mindaugas; Wenger, Christian; Wolff, Andre; Lupina, GrzegorzWe investigate the use of perfluorodecyltrichlorosilane-based self-assembled monolayer as seeding layer for chemical vapour deposition of HfO2 on large area CVD graphene. The deposition and evolution of the FDTS-based seed layer is investigated by X-ray photoelectron spectroscopy, Auger electron spectroscopy, and transmission electron microscopy. Crystalline quality of graphene transferred from Cu is monitored during formation of the seed layer as well as the HfO2 growth using Raman spectroscopy. We demonstrate that FDTS-based seed layer significantly improves nucleation of HfO2 layers so that graphene can be coated in a conformal way with HfO2 layers as thin as 10 nm. Proof-of-concept experiments on 200 mm wafers presented here validate applicability of the proposed approach to wafer scale graphene device fabrication.
- ItemResidual metallic contamination of transferred chemical vapor deposited graphene(Washington, DC : Soc., 2015) Lupina, Grzegorz; Kitzmann, Julia; Costina, Ioan; Lukosius, Mindaugas; Wenger, Christian; Wolff, Andre; Vaziri, Sam; Östling, Mikael; Pasternak, Iwona; Krajewska, Aleksandra; Strupinski, Wlodek; Kataria, Satender; Gahoi, Amit; Lemme, Max C.; Ruhl, Guenther; Zoth, Guenther; Luxenhofer, Oliver; Mehr, WolfgangIIntegration of graphene with Si microelectronics is very appealing by offering a potentially broad range of new functionalities. New materials to be integrated with the Si platform must conform to stringent purity standards. Here, we investigate graphene layers grown on copper foils by chemical vapor deposition and transferred to silicon wafers by wet etching and electrochemical delamination methods with respect to residual submonolayer metallic contaminations. Regardless of the transfer method and associated cleaning scheme, time-of-flight secondary ion mass spectrometry and total reflection X-ray fluorescence measurements indicate that the graphene sheets are contaminated with residual metals (copper, iron) with a concentration exceeding 1013 atoms/cm2. These metal impurities appear to be partially mobile upon thermal treatment, as shown by depth profiling and reduction of the minority charge carrier diffusion length in the silicon substrate. As residual metallic impurities can significantly alter electronic and electrochemical properties of graphene and can severely impede the process of integration with silicon microelectronics, these results reveal that further progress in synthesis, handling, and cleaning of graphene is required to advance electronic and optoelectronic applications.