Browsing by Author "Wurmehl, Sabine"
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- ItemDiscovery, Crystal Growth, and Characterization of Garnet Eu2PbSb2Zn3O12(Weinheim : Wiley-VCH, 2020) Morrow, Ryan; Sturza, Mihai I.; Ray, Rajyavardhan; Himcinschi, Cameliu; Kern, Jonas; Schlender, Philipp; Richter, Manuel; Wurmehl, Sabine; Büchner, BerndSingle crystal specimens of previously unknown garnet Eu2PbSb2Zn3O12 were grown in a reactive PbO:PbF2 flux medium. The crystals were characterized by a combination of X-ray crystallography, magnetization measurements, and the optical techniques of Raman, photoluminescence, and UV/Vis spectroscopy. The material exhibits Van Vleck paramagnetism associated with the J = 0 state of Eu3+, which was possible to accurately fit to a theoretical model. Band structure calculations were performed and compared to the experimental band gap of 1.98 eV. The crystals demonstrate photoluminescence associated with the 4f 6 configuration of the Eu3+ ions sitting at the distorted 8-coordinate garnet A site. The title compound represents a unique quinary contribution to a relatively unexplored area of rare earth bearing garnet crystal chemistry. © 2020 The Authors. Published by Wiley-VCH Verlag GmbH & Co. KGaA.
- ItemEvidence for a percolative Mott insulator-metal transition in doped Sr2IrO4(College Park, MD : APS, 2021) Sun, Zhixiang; Guevara, Jose M.; Sykora, Steffen; Pärschke, Ekaterina M.; Manna, Kaustuv; Maljuk, Andrey; Wurmehl, Sabine; van den Brink, Jeroen; Büchner, Bernd; Hess, ChristianDespite many efforts to rationalize the strongly correlated electronic ground states in doped Mott insulators, the nature of the doping-induced insulator-to-metal transition is still a subject under intensive investigation. Here, we probe the nanoscale electronic structure of the Mott insulator Sr2IrO4−δ with low-temperature scanning tunneling microscopy and find an enhanced local density of states (LDOS) inside the Mott gap at the location of individual defects which we interpret as defects at apical oxygen sites. A chiral behavior in the topography for those defects has been observed. We also visualize the local enhanced conductance arising from the overlapping of defect states which induces finite LDOS inside of the Mott gap. By combining these findings with the typical spatial extension of isolated defects of about 2 nm, our results indicate that the insulator-to-metal transition in Sr2IrO4−δ could be percolative in nature.
- ItemHall-plot of the phase diagram for Ba(Fe1−xCox)2As2(London : Nature Publishing Group, 2016) Iida, Kazumasa; Grinenko, Vadim; Kurth, Fritz; Ichinose, Ataru; Tsukada, Ichiro; Ahrens, Eike; Pukenas, Aurimas; Chekhonin, Paul; Skrotzki, Werner; Teresiak, Angelika; Hühne, Ruben; Aswartham, Saicharan; Wurmehl, Sabine; Erbe, Manuela; Hänisch, Jens; Holzapfel, Bernhard; Drechsler, Stefan-Ludwig; Efremov, Dmitri V.The Hall effect is a powerful tool for investigating carrier type and density. For single-band materials, the Hall coefficient is traditionally expressed simply by , where e is the charge of the carrier, and n is the concentration. However, it is well known that in the critical region near a quantum phase transition, as it was demonstrated for cuprates and heavy fermions, the Hall coefficient exhibits strong temperature and doping dependencies, which can not be described by such a simple expression, and the interpretation of the Hall coefficient for Fe-based superconductors is also problematic. Here, we investigate thin films of Ba(Fe1−xCox)2As2 with compressive and tensile in-plane strain in a wide range of Co doping. Such in-plane strain changes the band structure of the compounds, resulting in various shifts of the whole phase diagram as a function of Co doping. We show that the resultant phase diagrams for different strain states can be mapped onto a single phase diagram with the Hall number. This universal plot is attributed to the critical fluctuations in multiband systems near the antiferromagnetic transition, which may suggest a direct link between magnetic and superconducting properties in the BaFe2As2 system.
- ItemInterface control by homoepitaxial growth in pulsed laser deposited iron chalcogenide thin films(London : Nature Publishing Group, 2015) Molatta, Sebastian; Haindl, Silvia; Trommler, Sascha; Schulze, Michael; Wurmehl, Sabine; Hühne, RubenThin film growth of iron chalcogenides by pulsed laser deposition (PLD) is still a delicate issue in terms of simultaneous control of stoichiometry, texture, substrate/film interface properties, and superconducting properties. The high volatility of the constituents sharply limits optimal deposition temperatures to a narrow window and mainly challenges reproducibility for vacuum based methods. In this work we demonstrate the beneficial introduction of a semiconducting FeSe1−xTex seed layer for subsequent homoepitaxial growth of superconducting FeSe1−xTex thin film on MgO substrates. MgO is one of the most favorable substrates used in superconducting thin film applications, but the controlled growth of iron chalcogenide thin films on MgO has not yet been optimized and is the least understood. The large mismatch between the lattice constants of MgO and FeSe1−xTex of about 11% results in thin films with a mixed texture, that prevents further accurate investigations of a correlation between structural and electrical properties of FeSe1−xTex. Here we present an effective way to significantly improve epitaxial growth of superconducting FeSe1−xTex thin films with reproducible high critical temperatures (≥17 K) at reduced deposition temperatures (200 °C–320 °C) on MgO using PLD. This offers a broad scope of various applications.
- ItemOn the growth of Co-doped BaFe2As2 thin films on CaF2(Bristol : IOP Publ., 2019) Langer, Marco; Meyer, Sven; Ackermann, Kai; Grünewald, Lukas; Kauffmann-Weiss, Sandra; Aswartham, Saicharan; Wurmehl, Sabine; Hänisch, Jens; Holzapfel, BernhardThe competition between phase formation of BaF2 and Ba(Fe1-xCox)2As2 on CaF2 single crystals has been analysed. Ba(Fe0.92Co0.08)2As2 thin films have been deposited by pulsed laser deposition. X-ray diffraction, atomic force microscopy and scanning electron microscopy studies have revealed that the formation of secondary phases and misorientations as well as the growth modes of the Ba(Fe0.92Co0.08)2As2 thin films strongly depend on the growth rate. At high growth rates, formation of BaF2 is suppressed. The dependency of the Ba(Fe0.92Co0.08)2As2 lattice parameters supports the idea of fluorine diffusion into the crystal structure upon suppression of BaF2 formation similar as was proposed for FeSe1-xTex thin films on CaF2. Furthermore, a growth mode transition from a layer growth mechanism to a three-dimensional growth mode at high supersaturation has been found, suggesting similarities between the growth mechanism of iron-based superconductors and high-T c cuprate thin films. © 2019 Published under licence by IOP Publishing Ltd.
- ItemSpin-orbit coupling control of anisotropy, ground state and frustration in 5d2 Sr2MgOsO6(London : Nature Publishing Group, 2016) Morrow, Ryan; Taylor, Alice E.; Singh, D.J.; Xiong, Jie; Rodan, Steven; Wolter, A.U.B.; Wurmehl, Sabine; Büchner, Bernd; Stone, M.B.; Kolesnikov, A.I.; Aczel, Adam A.; Christianson, A.D.; Woodward, Patrick M.The influence of spin-orbit coupling (SOC) on the physical properties of the 5d2 system Sr2MgOsO6 is probed via a combination of magnetometry, specific heat measurements, elastic and inelastic neutron scattering, and density functional theory calculations. Although a significant degree of frustration is expected, we find that Sr2MgOsO6 orders in a type I antiferromagnetic structure at the remarkably high temperature of 108 K. The measurements presented allow for the first accurate quantification of the size of the magnetic moment in a 5d2 system of 0.60(2) μB –a significantly reduced moment from the expected value for such a system. Furthermore, significant anisotropy is identified via a spin excitation gap, and we confirm by first principles calculations that SOC not only provides the magnetocrystalline anisotropy, but also plays a crucial role in determining both the ground state magnetic order and the size of the local moment in this compound. Through comparison to Sr2ScOsO6, it is demonstrated that SOC-induced anisotropy has the ability to relieve frustration in 5d2 systems relative to their 5d3 counterparts, providing an explanation of the high TN found in Sr2MgOsO6.
- ItemStrong surface termination dependence of the electronic structure of polar superconductor LaFeAsO revealed by nano-ARPES([London] : IOP, 2022) Jung, Sung Won; Rhodes, Luke C; Watson, Matthew D; Evtushinsky, Daniil V; Cacho, Cephise; Aswartham, Saicharan; Kappenberger, Rhea; Wurmehl, Sabine; Büchner, Bernd; Kim, Timur KThe electronic structures of the iron-based superconductors have been intensively studied by using angle-resolved photoemission spectroscopy (ARPES). A considerable amount of research has been focused on the LaFeAsO family, showing the highest transition temperatures, where previous ARPES studies have found much larger Fermi surfaces than bulk theoretical calculations would predict. The discrepancy has been attributed to the presence of termination-dependent surface states. Here, using photoemission spectroscopy with a sub-micron focused beam spot (nano-ARPES) we have successfully measured the electronic structures of both the LaO and FeAs terminations in LaFeAsO. Our data reveal very different band dispersions and core-level spectra for different surface terminations, showing that previous macro-focus ARPES measurements were incomplete. Our results give direct evidence for the surface-driven electronic structure reconstruction in LaFeAsO, including formation of the termination-dependent surface states at the Fermi level. This experimental technique, which we have shown to be very powerful when applied to this prototypical compound, can now be used to study various materials with different surface terminations.
- ItemStructure-property relationship of Co 2 MnSi thin films in response to He + -irradiation([London] : Macmillan Publishers Limited, part of Springer Nature, 2019) Hammerath, Franziska; Bali, Rantej; Hübner, René; Brandt, Mira R. D.; Rodan, Steven; Potzger, Kay; Böttger, Roman; Sakuraba, Yuya; Wurmehl, SabineWe investigated the structure-property relationship of Co2MnSi Heusler thin films upon the irradiation with He+ ions. The variation of the crystal structure with increasing ion fluence has been probed using nuclear magnetic resonance (NMR) and transmission electron microscopy (TEM), and associated with the corresponding changes of the magnetic behavior. A decrease of both the structural order and the moment in saturation is observed. Specifically, we detect a direct transition from a highly L21-ordered to a fully A2-disordered structure type and quantify the evolution of the A2 structural contribution as a function of ion fluence. Complementary TEM analysis reveals a spatially-resolved distribution of the L21 and A2 phases showing that the A2 disorder starts at the upper part of the films. The structural degradation in turn leads to a decreasing magnetic moment in saturation in response to the increasing fluence.