Browsing by Author "Wuttig, Matthias"

Now showing 1 - 6 of 6
  • Thumbnail Image
    Item
    Advanced Optical Programming of Individual Meta-Atoms Beyond the Effective Medium Approach
    (Weinheim : Wiley-VCH, 2019) Michel, Ann-Katrin U.; Heßler, Andreas; Meyer, Sebastian; Pries, Julian; Yu, Yuan; Kalix, Thomas; Lewin, Martin; Hanss, Julian; De Rose, Angela; Maß, Tobias W.W.; Wuttig, Matthias; Chigrin, Dmitry N.; Taubner, Thomas
    Nanometer-thick active metasurfaces (MSs) based on phase-change materials (PCMs) enable compact photonic components, offering adjustable functionalities for the manipulation of light, such as polarization filtering, lensing, and beam steering. Commonly, they feature multiple operation states by switching the whole PCM fully between two states of drastically different optical properties. Intermediate states of the PCM are also exploited to obtain gradual resonance shifts, which are usually uniform over the whole MS and described by effective medium response. For programmable MSs, however, the ability to selectively address and switch the PCM in individual meta-atoms is required. Here, simultaneous control of size, position, and crystallization depth of the switched phase-change material (PCM) volume within each meta-atom in a proof-of-principle MS consisting of a PCM-covered Al–nanorod antenna array is demonstrated. By modifying optical properties locally, amplitude and light phase can be programmed at the meta-atom scale. As this goes beyond previous effective medium concepts, it will enable small adaptive corrections to external aberrations and fabrication errors or multiple complex functionalities programmable on the same MS. © 2019 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
  • Thumbnail Image
    Item
    Collaborative Research Center 917 : Resistively Switching Chalcogenides for Future Electronics : Structure, Kinetics, and Device Scalability : Final report : 2019/2-2020-2021-2022-2023/1
    (Hannover : Technische Informationsbibliothek, 2025-03-25) Wuttig, Matthias; Waser, Rainer; Dronskowski, Richard; Dittmann, Regina; Simon, Ulrich; Mayer, Joachim
    The goal of SFB 917 has been the development of novel nanoswitches that can be reproducibly and reversibly changed between two states on very short time and length scales. Such nanoswitches can enable new storage and memory devices as well as neuro-inspired architectures for information technology. In the third and final funding period of SFB 917 we have witnessed and contributed to three major trends. The exponential growth in the demand for data storage and processing has continued. Hardware improvements are therefore urgently needed to meet the increased demands for data storage and processing as well as the related increase in energy consumption. SFB 917 strives to realize novel storage devices by exploiting the full potential of chalcogenide-based nanoswitches. Yet, it has become increasingly clear in the last few years, that improvements in device performance alone are insufficient to deal with the exponential growth mentioned above. The advance of Large Language Models (LLMs) like ChatGPT and related software has produced a further increase in data processing related energy consumption. This is a major challenge considering the expected further increase of professional and private usage of such machine learning tools. To minimize the related energy consumption, particularly energy-efficient software and hardware developments are mandatory. Within SFB9917, we have this intensified our efforts to work on effects related to a reduction in energy consumption. While energy-efficient devices can help, an improvement in hardware architecture offers significantly more leverage. We have thus explored the potential of chalcogenide based nano-switches in neuro-inspired computer architectures. To this end, several new large-scale research projects have been initiated (NeuroSys and NeuroTec), which extend our research on these devices in increasingly more complex architectures, offering new opportunities to harvest the findings of SFB 917 in new applications. To tailor chalcogenide-based nano-switches, major advances in instrumentation as well as an in-depth understanding of the origin of underlying phenomena and unconventional properties in these materials have been mandatory. Challenges included the characterization of switching in these materials on nanosecond time and nanometer length scales. Sophisticated tools have been built and utilized. Understanding unconventional properties are required building a bridge between concepts of inorganic chemistry and material properties leading to novel treasure maps which help to identify and tailor chalcogenides for specific applications. These successes are described in detail in the present report. To demonstrate that these findings are also relevant for industry, close cooperation with industrial partners has been established to ensure that the findings made within SFB 917 can also be implemented on the shortest possible time scales.
  • Thumbnail Image
    Item
    Formation of resonant bonding during growth of ultrathin GeTe films
    (London : Nature Publishing Group, 2017) Wang, Ruining; Zhang, Wei; Momand, Jamo; Ronneberger, Ider; Boschker, Jos E.; Mazzarello, Riccardo; Kooi, Bart J.; Riechert, Henning; Wuttig, Matthias; Calarco, Raffaella
    A highly unconventional growth scenario is reported upon deposition of GeTe films on the hydrogen passivated Si(111) surface. Initially, an amorphous film forms for growth parameters that should yield a crystalline material. The entire amorphous film then crystallizes once a critical thickness of four GeTe bilayers is reached, subsequently following the GeTe(111) 
  • Thumbnail Image
    Item
    Nanostructured In3SbTe2 antennas enable switching from sharp dielectric to broad plasmonic resonances
    (Berlin : de Gruyter, 2022) Heßler, Andreas; Wahl, Sophia; Kristensen, Philip Trøst; Wuttig, Matthias; Busch, Kurt; Taubner, Thomas
    Phase-change materials (PCMs) allow for non-volatile resonance tuning of nanophotonic components. Upon switching, they offer a large dielectric contrast between their amorphous and crystalline phases. The recently introduced “plasmonic PCM” In3SbTe2 (IST) additionally features in its crystalline phase a sign change of its permittivity over a broad infrared spectral range. While optical resonance switching in unpatterned IST thin films has been investigated before, nanostructured IST antennas have not been studied, yet. Here, we present numerical and experimental investigations of nanostructured IST rod and disk antennas. By crystallizing the IST with microsecond laser pulses, we switched individual antennas from narrow dielectric to broad plasmonic resonances. For the rod antennas, we demonstrated a resonance shift of up to 1.2 µm (twice the resonance width), allowing on/off switching of plasmonic resonances with a contrast ratio of 2.7. With the disk antennas, we realized an increase of the resonance width by more than 800% from 0.24 µm to 1.98 µm while keeping the resonance wavelength constant. Further, we demonstrated intermediate switching states by tuning the crystallization depth within the resonators. Our work empowers future design concepts for nanophotonic applications like active spectral filters, tunable absorbers, and switchable flat optics.
  • Thumbnail Image
    Item
    Ordered Peierls distortion prevented at growth onset of GeTe ultra-thin films
    (London : Nature Publishing Group, 2016) Wang, Ruining; Campi, Davide; Bernasconi, Marco; Momand, Jamo; Kooi, Bart J.; Verheijen, Marcel A.; Wuttig, Matthias; Calarco, Raffaella
    Using reflection high-energy electron diffraction (RHEED), the growth onset of molecular beam epitaxy (MBE) deposited germanium telluride (GeTe) film on Si(111)-(√3 × √3)R30°-Sb surfaces is investigated, and a larger than expected in-plane lattice spacing is observed during the deposition of the first two molecular layers. High-resolution transmission electron microscopy (HRTEM) confirms that the growth proceeds via closed layers, and that those are stable after growth. The comparison of the experimental Raman spectra with theoretical calculated ones allows assessing the shift of the phonon modes for a quasi-free-standing ultra-thin GeTe layer with larger in-plane lattice spacing. The manifestation of the latter phenomenon is ascribed to the influence of the interface and the confinement of GeTe within the limited volume of material available at growth onset, either preventing the occurrence of Peierls dimerization or their ordered arrangement to occur normally.
  • Thumbnail Image
    Item
    Revisiting the local structure in Ge-Sb-Te based chalcogenide superlattices
    (London : Nature Publishing Group, 2016) Casarin, Barbara; Caretta, Antonio; Momand, Jamo; Kooi, Bart J.; Verheijen, Marcel A.; Bragaglia, Valeria; Calarco, Raffaella; Chukalina, Marina; Yu, Xiaoming; Robertson, John; Lange, Felix R.L.; Wuttig, Matthias; Redaelli, Andrea; Varesi, Enrico; Parmigiani, Fulvio; Malvestuto, Marco
    The technological success of phase-change materials in the field of data storage and functional systems stems from their distinctive electronic and structural peculiarities on the nanoscale. Recently, superlattice structures have been demonstrated to dramatically improve the optical and electrical performances of these chalcogenide based phase-change materials. In this perspective, unravelling the atomistic structure that originates the improvements in switching time and switching energy is paramount in order to design nanoscale structures with even enhanced functional properties. This study reveals a high- resolution atomistic insight of the [GeTe/Sb2Te3] interfacial structure by means of Extended X-Ray Absorption Fine Structure spectroscopy and Transmission Electron Microscopy. Based on our results we propose a consistent novel structure for this kind of chalcogenide superlattices.