The Bain library: A Cu-Au buffer template for a continuous variation of lattice parameters in epitaxial films

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Date
2014
Volume
2
Issue
4
Journal
Series Titel
Book Title
Publisher
New York : American Institute of Physics
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Abstract

Smallest variations of the lattice parameter result in significant changes in material properties. Whereas in bulk, lattice parameters can only be changed by composition or temperature, coherent epitaxial growth of thin films on single crystals allows adjusting the lattice parameters independently. Up to now only discrete values were accessible by using different buffer or substrate materials. We realize a lateral variation of in-plane lattice parameters using combinatorial film deposition of epitaxial Cu-Au on a 4-in. Si wafer. This template gives the possibility to adjust the in-plane lattice parameter over a wide range from 0.365 nm up to 0.382 nm.

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Keywords
Materials properties, Rutherford backscattering, Buffer layers, Lattice constants, Copper, Gold, X-ray diffraction, Thin film growth, Epitaxy, Sputter deposition
Citation
Kauffmann-Weiss, S., Hamann, S., Reichel, L., Siegel, A., Alexandrakis, V., Heller, R., et al. (2014). The Bain library: A Cu-Au buffer template for a continuous variation of lattice parameters in epitaxial films. 2(4). https://doi.org//10.1063/1.4870759
License
CC BY 3.0 Unported