Improving the modulation bandwidth in semiconductor lasers by passive feedback

We explore the concept of passive-feedback lasers for direct signal modulation at 40 Gbit/s. Based on numerical simulation and bifurcation analysis, we explain the main mechanisms in these devices which are crucial for modulation at high speed. The predicted effects are demonstrated experimentally by means of correspondingly designed devices. In particular a significant improvement of the modulation bandwidth at low injection currents can be demonstrated.

Keywords

Semiconductor laser, passive feedback, modulation bandwidth, direct modulation, damping, small signal response, large signal response, eye diagram

URI

https://doi.org/10.34657/2557
https://oa.tib.eu/renate/handle/123456789/3063

Citation

Radziunas, M., Glitzky, A., Bandelow, U., Wolfrum, M., Troppenz, U., Kreissl, J., & Rehbein, W. (2006). Improving the modulation bandwidth in semiconductor lasers by passive feedback (Vol. 1149). Berlin : Weierstraß-Institut für Angewandte Analysis und Stochastik.

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Mathematik

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