Single-electron transitions in one-dimensional native nanostructures
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Date
2014
Volume
568
Issue
Journal
Journal of Physics: Conference Series
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Book Title
Publisher
Bristol : Institute of Physics Publishing
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Abstract
Low-temperature measurements proved the existence of a two-dimensional electron gas at defined dislocation arrays in silicon. As a consequence, single-electron transitions (Coulomb blockades) are observed. It is shown that the high strain at dislocation cores modifies the band structure and results in the formation of quantum wells along dislocation lines. This causes quantization of energy levels inducing the formation of Coulomb blockades.
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Citation
Reiche, M., Kittler, M., Schmelz, M., Stolz, R., Pippel, E., Uebensee, H., et al. (2014). Single-electron transitions in one-dimensional native nanostructures (Bristol : Institute of Physics Publishing). Bristol : Institute of Physics Publishing. https://doi.org//10.1088/1742-6596/568/5/052024
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CC BY 3.0 Unported