Static Dielectric Constant of β-Ga2O3 Perpendicular to the Principal Planes (100), (010), and (001)

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Date
2019
Volume
8
Issue
7
Journal
ECS journal of solid state science and technology : JSS
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Publisher
Pennington, NJ : ECS
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Abstract

The relative static dielectric constant ℇr of β-Ga2O3 perpendicular to the planes (100), (010), and (001) is determined in the temperature range from 25 K to 500 K by measuring the AC capacitance of correspondingly oriented plate capacitor structures using test frequencies of up to 1 MHz. This allows a direct quantification of the static dielectric constant and a unique direction assignment of the obtained values. At room temperature, ℇr perpendicular to the planes (100), (010), and (001) amounts to 10.2 ± 0.2, 10.87 ± 0.08, and 12.4 ± 0.4, respectively, which clearly evidence the anisotropy expected for β-Ga2O3 due to its monoclinic crystal structure. An increase of ℇr by about 0.5 with increasing temperature from 25 K to 450 K was found for all orientations. Our ℇr data resolve the inconsistencies in the previously available literature data with regard to absolute values and their directional assignment and therefore provide a reliable basis for the simulation and design of devices. © The Author(s) 2019.

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Fiedler, A., Schewski, R., Galazka, Z., & Irmscher, K. (2019). Static Dielectric Constant of β-Ga2O3 Perpendicular to the Principal Planes (100), (010), and (001) (Pennington, NJ : ECS). Pennington, NJ : ECS. https://doi.org//10.1149/2.0201907jss
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CC BY 4.0 Unported