Narrowing of the far field in spatially modulated edge-emitting broad area semiconductor amplifiers
| dc.bibliographicCitation.seriesTitle | WIAS Preprints | eng |
| dc.bibliographicCitation.volume | 2088 | |
| dc.contributor.author | Radziunas, Mindaugas | |
| dc.contributor.author | Herrero, Ramon | |
| dc.contributor.author | Botey, Muriel | |
| dc.contributor.author | Staliunas, Kestutis | |
| dc.date.accessioned | 2016-03-24T17:37:04Z | |
| dc.date.available | 2019-06-28T08:13:17Z | |
| dc.date.issued | 2015 | |
| dc.description.abstract | We perform a detailed theoretical analysis of the far field narrowing in broad-area edgeemitting semiconductor amplifiers that are electrically injected through the contacts periodically modulated in both, longitudinal and transverse, directions. The beam propagation properties within the semiconductor amplifier are explored by a (1+2)-dimensional traveling wave model and its coupled mode approximation. Assuming a weak field regime, we analyze the impact of different parameters and modulation geometry on the narrowing of the principal far field component. | eng |
| dc.description.version | publishedVersion | eng |
| dc.format | application/pdf | |
| dc.identifier.issn | 2198-5855 | |
| dc.identifier.uri | https://doi.org/10.34657/2698 | |
| dc.identifier.uri | https://oa.tib.eu/renate/handle/123456789/2919 | |
| dc.language.iso | eng | eng |
| dc.publisher | Berlin : Weierstraß-Institut für Angewandte Analysis und Stochastik | eng |
| dc.relation.issn | 0946-8633 | eng |
| dc.rights.license | This document may be downloaded, read, stored and printed for your own use within the limits of § 53 UrhG but it may not be distributed via the internet or passed on to external parties. | eng |
| dc.rights.license | Dieses Dokument darf im Rahmen von § 53 UrhG zum eigenen Gebrauch kostenfrei heruntergeladen, gelesen, gespeichert und ausgedruckt, aber nicht im Internet bereitgestellt oder an Außenstehende weitergegeben werden. | ger |
| dc.subject.ddc | 510 | eng |
| dc.subject.other | Semiconductor amplifier | eng |
| dc.subject.other | traveling wave model | eng |
| dc.subject.other | coupled mode approach | eng |
| dc.subject.other | periodic structure | eng |
| dc.subject.other | anisotropy | eng |
| dc.subject.other | far field | eng |
| dc.subject.other | spatial filtering | eng |
| dc.title | Narrowing of the far field in spatially modulated edge-emitting broad area semiconductor amplifiers | eng |
| dc.type | Report | eng |
| dc.type | Text | eng |
| tib.accessRights | openAccess | eng |
| wgl.contributor | WIAS | eng |
| wgl.subject | Mathematik | eng |
| wgl.type | Report / Forschungsbericht / Arbeitspapier | eng |
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