Numerical simulation of TEM images for In(Ga)As/GaAs quantum dots with various shapes

dc.bibliographicCitation.firstPage257eng
dc.bibliographicCitation.issue5eng
dc.bibliographicCitation.journalTitleOptical and quantum electronics : OQEeng
dc.bibliographicCitation.volume52eng
dc.contributor.authorMaltsi, Anieza
dc.contributor.authorNiermann, Tore
dc.contributor.authorStreckenbach, Timo
dc.contributor.authorTabelow, Karsten
dc.contributor.authorKoprucki, Thomas
dc.date.accessioned2022-04-25T07:25:06Z
dc.date.available2022-04-25T07:25:06Z
dc.date.issued2020
dc.description.abstractWe present a mathematical model and a tool chain for the numerical simulation of TEM images of semiconductor quantum dots (QDs). This includes elasticity theory to obtain the strain profile coupled with the Darwin–Howie–Whelan equations, describing the propagation of the electron wave through the sample. We perform a simulation study on indium gallium arsenide QDs with different shapes and compare the resulting TEM images to experimental ones. This tool chain can be applied to generate a database of simulated TEM images, which is a key element of a novel concept for model-based geometry reconstruction of semiconductor QDs, involving machine learning techniques.eng
dc.description.versionpublishedVersioneng
dc.identifier.urihttps://oa.tib.eu/renate/handle/123456789/8800
dc.identifier.urihttps://doi.org/10.34657/7838
dc.language.isoengeng
dc.publisherDordrecht [u.a.] : Springer Science + Business Media B.Veng
dc.relation.doihttps://doi.org/10.1007/s11082-020-02356-y
dc.relation.essn1572-817X
dc.rights.licenseCC BY 4.0 Unportedeng
dc.rights.urihttps://creativecommons.org/licenses/by/4.0/eng
dc.subject.ddc500
dc.subject.ddc620
dc.titleNumerical simulation of TEM images for In(Ga)As/GaAs quantum dots with various shapeseng
dc.typeArticleeng
dc.typeTexteng
tib.accessRightsopenAccesseng
wgl.contributorWIASeng
wgl.subjectIngenieurwissenschafteneng
wgl.typeZeitschriftenartikeleng
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