Engineering Materials and Interfaces With Plasma-Enhanced ALD : Toward Energy and Environmental Solutions

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Date

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Advisor

Volume

23

Issue

6

Journal

Plasma Processes and Polymers

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Weinheim : Wiley-VCH

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Abstract

Plasma-enhanced atomic layer deposition (PE-ALD) enables atomic-scale interface engineering by combining saturation-limited growth with non-equilibrium plasma chemistry. This review examines how plasma–surface interactions control composition, defect density, and interfacial energetics across energy and environmental technologies. In photocatalysis and photoelectrochemistry, PE-ALD regulates nucleation and heterojunction formation, governing charge separation and transport. In water treatment, it enables sub-nanometer tuning of pore structure and surface chemistry, linking interfaces to selective transport and fouling resistance. In piezoelectric and thermoelectric systems, it provides low-temperature control of crystallographic orientation and interfacial coupling. This versatility across oxides, nitrides, and polymeric substrates expands the accessible design space beyond thermal processes.

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Keywords GND

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Article

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publishedVersion

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CC BY 4.0 International