Author Correction: Modulation of van der Waals and classical epitaxy induced by strain at the Si step edges in GeSbTe alloys

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dc.bibliographicCitation.firstPage5015
dc.bibliographicCitation.journalTitleScientific reportseng
dc.bibliographicCitation.volume8
dc.contributor.authorZallo, Eugenio
dc.contributor.authorCecchi, Stefano
dc.contributor.authorBoschker, Jos E.
dc.contributor.authorMio, Antonio M.
dc.contributor.authorArciprete, Fabrizio
dc.contributor.authorPrivitera, Stefania
dc.contributor.authorCalarco, Raffaella
dc.date.accessioned2023-01-20T08:11:29Z
dc.date.available2023-01-20T08:11:29Z
dc.date.issued2018-3-19
dc.description.abstract[no abstract available]eng
dc.description.versionpublishedVersioneng
dc.identifier.urihttps://oa.tib.eu/renate/handle/123456789/10966
dc.identifier.urihttp://dx.doi.org/10.34657/9992
dc.language.isoeng
dc.publisher[London] : Macmillan Publishers Limited, part of Springer Nature
dc.relation.doihttps://doi.org/10.1038/s41598-018-23156-1
dc.relation.essn2045-2322
dc.rights.licenseCC BY 4.0 Unported
dc.rights.urihttps://creativecommons.org/licenses/by/4.0/
dc.subject.ddc500
dc.subject.ddc600
dc.titleAuthor Correction: Modulation of van der Waals and classical epitaxy induced by strain at the Si step edges in GeSbTe alloyseng
dc.typeArticleeng
dc.typeTexteng
tib.accessRightsopenAccesseng
wgl.contributorPDI
wgl.subjectPhysikger
wgl.typeZeitschriftenartikelger
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