Author Correction: Modulation of van der Waals and classical epitaxy induced by strain at the Si step edges in GeSbTe alloys

dc.bibliographicCitation.firstPage5015
dc.bibliographicCitation.volume8
dc.contributor.authorZallo, Eugenio
dc.contributor.authorCecchi, Stefano
dc.contributor.authorBoschker, Jos E.
dc.contributor.authorMio, Antonio M.
dc.contributor.authorArciprete, Fabrizio
dc.contributor.authorPrivitera, Stefania
dc.contributor.authorCalarco, Raffaella
dc.date.accessioned2023-01-20T08:11:29Z
dc.date.available2023-01-20T08:11:29Z
dc.date.issued2018-3-19
dc.description.abstract[no abstract available]eng
dc.description.versionpublishedVersioneng
dc.identifier.urihttps://oa.tib.eu/renate/handle/123456789/10966
dc.identifier.urihttp://dx.doi.org/10.34657/9992
dc.language.isoeng
dc.publisher[London] : Macmillan Publishers Limited, part of Springer Nature
dc.relation.doihttps://doi.org/10.1038/s41598-018-23156-1
dc.relation.essn2045-2322
dc.relation.ispartofseriesScientific reports 8 (2018)
dc.rights.licenseCC BY 4.0 Unported
dc.rights.urihttps://creativecommons.org/licenses/by/4.0/
dc.subject.ddc500
dc.subject.ddc600
dc.titleAuthor Correction: Modulation of van der Waals and classical epitaxy induced by strain at the Si step edges in GeSbTe alloyseng
dc.typearticleeng
dc.typeTexteng
dcterms.bibliographicCitation.journalTitleScientific reports
tib.accessRightsopenAccesseng
wgl.contributorPDI
wgl.subjectPhysikger
wgl.typeZeitschriftenartikelger
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