Thermal annealing studies of GeTe-Sb2Te3 alloys with multiple interfaces

dc.bibliographicCitation.journalTitleAIP Advanceseng
dc.bibliographicCitation.volume7
dc.contributor.authorBragaglia, Valeria
dc.contributor.authorMio, Antonio M.
dc.contributor.authorCalarco, Raffaella
dc.date.accessioned2018-01-23T03:02:27Z
dc.date.available2019-06-28T12:39:04Z
dc.date.issued2017
dc.description.abstractA high degree of vacancy ordering is obtained by annealing amorphous GeTe-Sb2Te3 (GST) alloys deposited on a crystalline substrate, which acts as a template for the crystallization. Under annealing the material evolves from amorphous to disordered rocksalt, to ordered rocksalt with vacancies arranged into (111) oriented layers, and finally converts into the stable trigonal phase. The role of the interface in respect to the formation of an ordered crystalline phase is studied by comparing the transformation stages of crystalline GST with and without a capping layer. The capping layer offers another crystallization interface, which harms the overall crystalline quality.eng
dc.description.versionpublishedVersioneng
dc.formatapplication/pdf
dc.identifier.urihttps://doi.org/10.34657/1699
dc.identifier.urihttps://oa.tib.eu/renate/handle/123456789/4176
dc.language.isoengeng
dc.publisherNew York : American Institute of Physicseng
dc.relation.doihttps://doi.org/10.1063/1.5000338
dc.rights.licenseCC BY 4.0 Unportedeng
dc.rights.urihttps://creativecommons.org/licenses/by/4.0/eng
dc.subject.ddc530eng
dc.subject.otherAmorphous metalseng
dc.subject.otherCrystal structureeng
dc.subject.otherSemiconductor deviceeng
dc.subject.otherfabricationeng
dc.subject.otherAnnealing Chemical compoundseng
dc.titleThermal annealing studies of GeTe-Sb2Te3 alloys with multiple interfaceseng
dc.typeArticleeng
dc.typeTexteng
tib.accessRightsopenAccesseng
wgl.contributorPDIeng
wgl.subjectPhysikeng
wgl.typeZeitschriftenartikeleng
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