Interface polarization model for a 2-dimensional electron gas at the BaSnO3/LaInO3 interface
dc.bibliographicCitation.firstPage | 16202 | |
dc.bibliographicCitation.journalTitle | Scientific Reports | eng |
dc.bibliographicCitation.volume | 9 | |
dc.contributor.author | Kim, Young Mo | |
dc.contributor.author | Markurt, T. | |
dc.contributor.author | Kim, Youjung | |
dc.contributor.author | Zupancic, M. | |
dc.contributor.author | Shin, Juyeon | |
dc.contributor.author | Albrecht, M. | |
dc.contributor.author | Char, Kookrin | |
dc.date.accessioned | 2022-10-21T08:17:45Z | |
dc.date.available | 2022-10-21T08:17:45Z | |
dc.date.issued | 2019 | |
dc.description.abstract | In order to explain the experimental sheet carrier density n2D at the interface of BaSnO3/LaInO3, we consider a model that is based on the presence of interface polarization in LaInO3 which extends over 2 pseudocubic unit cells from the interface and eventually disappears in the next 2 unit cells. Considering such interface polarization in calculations based on 1D Poisson-Schrödinger equations, we consistently explain the dependence of the sheet carrier density of BaSnO3/LaInO3 heterinterfaces on the thickness of the LaInO3 layer and the La doping of the BaSnO3 layer. Our model is supported by a quantitative analysis of atomic position obtained from high resolution transmission electron microscopy which evidences suppression of the octahedral tilt and a vertical lattice expansion in LaInO3 over 2–3 pseudocubic unit cells at the coherently strained interface. | eng |
dc.description.version | publishedVersion | eng |
dc.identifier.uri | https://oa.tib.eu/renate/handle/123456789/10281 | |
dc.identifier.uri | http://dx.doi.org/10.34657/9317 | |
dc.language.iso | eng | |
dc.publisher | [London] : Macmillan Publishers Limited, part of Springer Nature | |
dc.relation.doi | https://doi.org/10.1038/s41598-019-52772-8 | |
dc.relation.essn | 2045-2322 | |
dc.rights.license | CC BY 4.0 Unported | |
dc.rights.uri | https://creativecommons.org/licenses/by/4.0/ | |
dc.subject.ddc | 500 | eng |
dc.subject.ddc | 600 | eng |
dc.subject.other | calculation | eng |
dc.subject.other | doping | eng |
dc.subject.other | high resolution transmission electron microscopy | eng |
dc.subject.other | polarization | eng |
dc.subject.other | quantitative analysis | eng |
dc.subject.other | thickness | eng |
dc.title | Interface polarization model for a 2-dimensional electron gas at the BaSnO3/LaInO3 interface | eng |
dc.type | Article | eng |
dc.type | Text | eng |
tib.accessRights | openAccess | |
wgl.contributor | IKZ | |
wgl.subject | Chemie | |
wgl.subject | Physik | |
wgl.type | Zeitschriftenartikel |
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