Modeling and simulation of the cascaded polarization-coupled system of broad-area semiconductor lasers
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3116
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WIAS Preprints
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Berlin : Weierstraß-Institut für Angewandte Analysis und Stochastik
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Abstract
We consider a brightness- and power-scalable rectified polarization beam combining scheme for high-power, broad-area edge-emitting semiconductor laser diodes. The coupling of 2m emitters is achieved through Lyot-filtered optical reinjection from a specially designed multi-stage external cavity, which forces individual diodes to lase on interleaved frequency combs with overlapping envelopes. Simulations of up to sixteen coupled emitters and analysis of the calculated beams suggest that, under ideal conditions, a beam coupling efficiency of approximately 90% can be expected. Reducing optical losses within the external cavity is crucial for improving this efficiency in experimental systems.
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Keywords GND
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This document may be downloaded, read, stored and printed for your own use within the limits of § 53 UrhG but it may not be distributed via the internet or passed on to external parties.
Dieses Dokument darf im Rahmen von § 53 UrhG zum eigenen Gebrauch kostenfrei heruntergeladen, gelesen, gespeichert und ausgedruckt, aber nicht im Internet bereitgestellt oder an Außenstehende weitergegeben werden.
Dieses Dokument darf im Rahmen von § 53 UrhG zum eigenen Gebrauch kostenfrei heruntergeladen, gelesen, gespeichert und ausgedruckt, aber nicht im Internet bereitgestellt oder an Außenstehende weitergegeben werden.
