Versatile high power pulse-laser source for pico- and nanosecond optical pulses

dc.bibliographicCitation.firstPage15023eng
dc.bibliographicCitation.issue1eng
dc.bibliographicCitation.journalTitleEngineering research expresseng
dc.bibliographicCitation.lastPage94eng
dc.bibliographicCitation.volume2eng
dc.contributor.authorLiero, Armin
dc.contributor.authorKlehr, Andreas
dc.contributor.authorKnigge, Andrea
dc.contributor.authorHeinrich, Wolfgang
dc.date.accessioned2021-08-18T07:00:11Z
dc.date.available2021-08-18T07:00:11Z
dc.date.issued2020
dc.description.abstractThis paper presents a pulse-laser source for the generation of ps and ns laser pulses with more than 50 W peak output power. The final stages of the drivers use GaN transistors and are capable of switching currents of 0.8 A with 200 ps minimum pulse width and 50 A with 3 ns minimum pulse width. The pulses can be externally triggered by ECL logic. Both single-pulse and pulse train modes are possible.eng
dc.description.fondsLeibniz_Fonds
dc.description.versionpublishedVersioneng
dc.identifier.urihttps://oa.tib.eu/renate/handle/123456789/6494
dc.identifier.urihttps://doi.org/10.34657/5541
dc.language.isoengeng
dc.publisherLondon : Institute of Physicseng
dc.relation.doihttps://doi.org/10.1088/2631-8695/ab5be5
dc.relation.essn2631-8695
dc.rights.licenseCC BY 3.0 Unportedeng
dc.rights.urihttps://creativecommons.org/licenses/by/3.0/eng
dc.subject.ddc600eng
dc.subject.ddc620eng
dc.subject.otherFast current drivereng
dc.subject.otherGaN HEMTeng
dc.subject.otherMode lockingeng
dc.subject.otherOptical pulse gatingeng
dc.subject.otherPicosecond laser sourceeng
dc.titleVersatile high power pulse-laser source for pico- and nanosecond optical pulseseng
dc.typeArticleeng
dc.typeTexteng
tib.accessRightsopenAccesseng
wgl.contributorFBHeng
wgl.subjectIngenieurwissenschafteneng
wgl.typeZeitschriftenartikeleng
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