A variance-reduced electrothermal Monte Carlo method for semiconductor device simulation

dc.bibliographicCitation.seriesTitleWIAS Preprintseng
dc.bibliographicCitation.volume1699
dc.contributor.authorMuscato, Orazio
dc.contributor.authorDi Stefano, Vincenza
dc.contributor.authorWagner, Wolfgang
dc.date.accessioned2016-03-24T17:38:07Z
dc.date.available2019-06-28T08:02:18Z
dc.date.issued2012
dc.description.abstractThis paper is concerned with electron transport and heat generation in semiconductor devices. An improved version of the electrothermal Monte Carlo method is presented. This modification has better approximation properties due to reduced statistical fluctuations. The corresponding transport equations are provided and results of numerical experiments are presented.eng
dc.description.versionpublishedVersioneng
dc.formatapplication/pdf
dc.identifier.issn0946-8633
dc.identifier.urihttps://doi.org/10.34657/1935
dc.identifier.urihttps://oa.tib.eu/renate/handle/123456789/1797
dc.language.isoengeng
dc.publisherBerlin : Weierstraß-Institut für Angewandte Analysis und Stochastikeng
dc.relation.issn0946-8633eng
dc.rights.licenseThis document may be downloaded, read, stored and printed for your own use within the limits of § 53 UrhG but it may not be distributed via the internet or passed on to external parties.eng
dc.rights.licenseDieses Dokument darf im Rahmen von § 53 UrhG zum eigenen Gebrauch kostenfrei heruntergeladen, gelesen, gespeichert und ausgedruckt, aber nicht im Internet bereitgestellt oder an Außenstehende weitergegeben werden.ger
dc.subject.ddc510eng
dc.subject.otherSemiconductor deviceseng
dc.subject.otherMonte Carlo simulationeng
dc.subject.otherelectrothermal modellingeng
dc.titleA variance-reduced electrothermal Monte Carlo method for semiconductor device simulationeng
dc.typeReporteng
dc.typeTexteng
tib.accessRightsopenAccesseng
wgl.contributorWIASeng
wgl.subjectMathematikeng
wgl.typeReport / Forschungsbericht / Arbeitspapiereng
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