Cross sections for electron scattering on Ga⁺ ions

Abstract

The relativistic convergent close-coupling method is applied to calculate cross sections for electron scattering on Ga+ ions. Integrated excitation cross sections are presented for the ground 3d104s2 1S0 electronic state for incident energies between the first excitation threshold and 500 eV. Rate coefficients for these transitions are presented assuming a Maxwellian electron energy distribution. Estimates are presented for the integrated single ionisation cross section (ISICS) for scattering on the 4s2 1S0 and 4s4p 3P°j states for j ∈ {0, 1, 2}, including direct ionisation from the 4s, 4p and 3d electrons, and excitation autoionisation contributions from 3d electrons. Mixed agreement was found between the present ISICS and existing data.