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- ItemAtomically controlled CVD processing of group IV semiconductors for ultra-large-scale integrations(Bristol : IOP Publishing, 2012) Murota, Junichi; Sakuraba, Masao; Tillack, BerndOne of the main requirements for ultra-large-scale integrations (ULSIs) is atomic-order control of process technology. Our concept of atomically controlled processing is based on atomic-order surface reaction control by CVD. By ultraclean low-pressure CVD using SiH4 and GeH4 gases, high-quality low-temperature epitaxial growth of Si1−xGex (100) (x=0–1) with atomically flat surfaces and interfaces on Si(100) is achieved. Self-limiting formation of 1–3 atomic layers of group IV or related atoms in the thermal adsorption and reaction of hydride gases on Si1-xGex (100) are generalized based on the Langmuir-type model. By the Si epitaxial growth on top of the material already-formed on Si(100), N, B and C atoms are confined within about a 1 nm thick layer. In Si cap layer growth on the P atomic layer formed on Si1−xGex (100), segregation of P atoms is suppressed by using Si2H6 instead of SiH4 at a low temperature of 450 °C. Heavy C atomic-layer doping suppresses strain relaxation as well as intermixing between Si and Ge at the Si1−xGex/Si heterointerface. It is confirmed that higher carrier concentration and higher carrier mobility are achieved by atomic-layer doping. These results open the way to atomically controlled technology for ULSIs.
- ItemA physical origin of cross-polarization and higher-order modes in two-dimensional (2D) grating couplers and the related device performance limitations(Bristol : IOP Publishing, 2021) Georgieva, Galina; Voigt, Karsten; Seiler, Pascal M.; Mai, Christian; Petermann, Klaus; Zimmermann, LarsWe explore scattering effects as the physical origin of cross-polarization and higher-order modes in silicon photonic 2D grating couplers (GCs). A simplified analytical model is used to illustrate that in-plane scattering always takes place, independent of grating geometry and design coupling angle. Experimental investigations show furthermore that grating design parameters are especially related to the modal composition of both the target- and the cross-polarization. Scattering effects and the associated cross-polarization and higher-order modes are indicated as the main reason for the higher 2D GC insertion loss compared to standard 1D GCs. In addition, they can be responsible for a variable 2D GC spectrum shape, bandwidth and polarization dependent loss.
- ItemBa termination of Ge(001) studied with STM(Bristol : IOP Publishing, 2015) Koczorowski, W.; Grzela, T.; Radny, M.W.; Schofield, S.R.; Capellini, G.; Czajka, R.; Schroeder, T.; Curson, N.J.We use controlled annealing to tune the interfacial properties of a sub-monolayer and monolayer coverages of Ba atoms deposited on Ge(001), enabling the generation of either of two fundamentally distinct interfacial phases, as revealed by scanning tunneling microscopy. Firstly we identify the two key structural phases associated with this adsorption system, namely on-top adsorption and surface alloy formation, by performing a deposition and annealing experiment at a coverage low enough (~0.15 ML) that isolated Ba-related features can be individually resolved. Subsequently we investigate the monolayer coverage case, of interest for passivation schemes of future Ge based devices, for which we find that the thermal evaporation of Ba onto a Ge(001) surface at room temperature results in on-top adsorption. This separation (lack of intermixing) between Ba and Ge layers is retained through successive annealing steps to temperatures of 470, 570, 670 and 770 K although a gradual ordering of the Ba layer is observed at 570 K and above, accompanied by a decrease in Ba layer density. Annealing above 770 K produces the 2D surface alloy phase accompanied by strain relief through monolayer height trench formation. An annealing temperature of 1070 K sees a further change in surface morphology but retention of the 2D surface alloy characteristic. These results are discussed in view of their possible implications for future semiconductor integrated circuit technology.
- ItemRaman spectroscopy in layered hybrid organic-inorganic metal halide perovskites(Bristol : IOP Publishing, 2022) Spirito, Davide; Asensio, Yaiza; Hueso, Luis E.; Martín-García, BeatrizThe continuous progress in the synthesis and characterization of materials in the vast family of hybrid organic-inorganic metal halide perovskites (HOIPs) has been pushed by their exceptional properties mainly in optoelectronic applications. These works highlight the peculiar role of lattice vibrations, which strongly interact with electrons, resulting in coupled states affecting the optical properties. Among these materials, layered (2D) HOIPs have emerged as a promising material platform to address some issues of their three-dimensional counterparts, such as ambient stability and ion migration. Layered HOIPs consist of inorganic layers made of metal halide octahedra separated by layers composed of organic cations. They have attracted much interest not only for applications, but also for their rich phenomenology due to their crystal structure tunability. Here, we give an overview of the main experimental findings achieved via Raman spectroscopy in several configurations and set-ups, and how they contribute to shedding light on the complex structural nature of these fascinating materials. We focus on how the phonon spectrum comes from the interplay of several factors. First, the inorganic and organic parts, whose motions are coupled, contribute with their typical modes which are very different in energy. Nonetheless, the interaction between them is relevant, as it results in low-symmetry crystal structures. Then, the role of external stimuli, such as temperature and pressure, which induce phase transitions affecting the spectrum through change in symmetry of the lattice, octahedral tilting and arrangement of the molecules. Finally, the relevant role of the coupling between the charge carriers and optical phonons is highlighted.
- ItemSilicon-organic hybrid photonics: Overview of recent advances, electro-optical effects and CMOS-integration concepts(Bristol : IOP Publishing, 2021) Steglich, Patrick; Mai, Christian; Villringer, Claus; Dietzel, Birgit; Bondarenko, Siegfried; Ksianzou, Viachaslau; Villasmunta, Francesco; Zesch, Christoph; Pulwer, Silvio; Burger, Martin; Bauer, Joachim; Heinrich, Friedhelm; Schrader, Sigurd; Vitale, Francesco; De Matteis, Fabio; Prosposito, Paolo; Casalboni, Mauro; Mai, AndreasIn recent decades, much research effort has been invested in the development of photonic integrated circuits, and silicon-on-insulator technology has been established as a reliable platform for highly scalable silicon-based electro-optical modulators. However, the performance of such devices is restricted by the inherent material properties of silicon. An approach to overcoming these deficiencies is to integrate organic materials with exceptionally high optical nonlinearities into a silicon-on-insulator photonic platform. Silicon–organic hybrid photonics has been shown to overcome the drawbacks of silicon-based modulators in terms of operating speed, bandwidth, and energy consumption. This work reviews recent advances in silicon–organic hybrid photonics and covers the latest improvements to single components and device concepts. Special emphasis is given to the in-device performance of novel electro-optical polymers and the use of different electro-optical effects, such as the linear and quadratic electro-optical effect, as well as the electric-field-induced linear electro-optical effect. Finally, the inherent challenges of implementing non-linear optical polymers on a silicon photonic platform are discussed and a perspective for future directions is given.
- ItemGrowth and applications of GeSn-related group-IV semiconductor materials(Bristol : IOP Publishing, 2015) Zaima, Shigeaki; Nakatsuka, Osamu; Taoka, Noriyuki; Kurosawa, Masashi; Takeuchi, Wakana; Sakashita, MitsuoWe review the technology of Ge1−xSnx-related group-IV semiconductor materials for developing Si-based nanoelectronics. Ge1−xSnx-related materials provide novel engineering of the crystal growth, strain structure, and energy band alignment for realising various applications not only in electronics, but also in optoelectronics. We introduce our recent achievements in the crystal growth of Ge1−xSnx-related material thin films and the studies of the electronic properties of thin films, metals/Ge1−xSnx, and insulators/Ge1−xSnx interfaces. We also review recent studies related to the crystal growth, energy band engineering, and device applications of Ge1−xSnx-related materials, as well as the reported performances of electronic devices using Ge1−xSnx related materials.