This document may be downloaded, read, stored and printed for your own use within the limits of § 53 UrhG but it may not be distributed via the internet or passed on to external parties.Dieses Dokument darf im Rahmen von § 53 UrhG zum eigenen Gebrauch kostenfrei heruntergeladen, gelesen, gespeichert und ausgedruckt, aber nicht im Internet bereitgestellt oder an Außenstehende weitergegeben werden.Radziunas, MindaugasVladimirov, Andrei G.Viktorov, Evgeny A.Fiol, GerritSchmeckebier, HolgerBimberg, Dieter2016-03-242019-06-2820100946-8633https://doi.org/10.34657/2097https://oa.tib.eu/renate/handle/123456789/2594We consider a mode-locked quantum-dot edge-emitting semiconductor laser consisting of a reverse biased saturable absorber and a forward biased amplifying section. To describe the dynamics of this laser we use the traveling wave model taking into account carrier exchange processes between a reservoir and the quantum dots. A comprehensive parameter study is presented and an analysis of mode-locking pulse broadening with an increase of injection current is performed. The results of our theoretical analysis are supported by experimental data demonstrating a strong pulse asymmetry in a monolithic two section quantum dot mode-locked laserapplication/pdfeng510Mode-lockingsemiconductor laserquantum dotssaturable absorberpulse broadeningtrailing edgeReport