This document may be downloaded, read, stored and printed for your own use within the limits of § 53 UrhG but it may not be distributed via the internet or passed on to external parties.Dieses Dokument darf im Rahmen von § 53 UrhG zum eigenen Gebrauch kostenfrei heruntergeladen, gelesen, gespeichert und ausgedruckt, aber nicht im Internet bereitgestellt oder an Außenstehende weitergegeben werden.Radziunas, MindaugasHerrero, RamonBotey, MurielStaliunas, Kestutis2016-03-242019-06-2820152198-5855https://doi.org/10.34657/2698https://oa.tib.eu/renate/handle/123456789/2919We perform a detailed theoretical analysis of the far field narrowing in broad-area edgeemitting semiconductor amplifiers that are electrically injected through the contacts periodically modulated in both, longitudinal and transverse, directions. The beam propagation properties within the semiconductor amplifier are explored by a (1+2)-dimensional traveling wave model and its coupled mode approximation. Assuming a weak field regime, we analyze the impact of different parameters and modulation geometry on the narrowing of the principal far field component.application/pdfeng510Semiconductor amplifiertraveling wave modelcoupled mode approachperiodic structureanisotropyfar fieldspatial filteringReport