CC BY 3.0 UnportedHilt, O.Bahat-Treidel, E.Brunner, F.Knauer, A.Zhytnytska, R.Kotara, P.Wuerfl, J.2019-06-282014https://doi.org/10.34657/1591https://oa.tib.eu/renate/handle/123456789/4408Normally-off high voltage GaN-HFETs for switching applications are presented. Normally-off operation with threshold voltages of 1 V and more and with 5 V gate swing has been obtained by using p-type GaN as gate. Different GaN-based buffer types using doping and backside potential barriers have been used to obtain blocking strengths up to 1000 V. The increase of the dynamic on-state resistance is analyzed for the different buffer types. The best trade-off between low dispersion and high blocking strength was obtained for a modified carbon-doped GaN-buffer that showed a 2.6x increase of the dynamic on-state resistance for 500 V switching as compared to switching from 20 V off-state drain bias. Device operation up to 200 °C ambient temperature without any threshold voltage shift is demonstrated.application/pdfenghttps://creativecommons.org/licenses/by/3.0/530Heat problemsThermoanalysisThreshold voltageArticleKonferenzschrift