CC BY 4.0 UnportedPark, EunmiSeifert, MariettaRane, Gayatri K.Menzel, Siegfried B.Gemming, ThomasNielsch, Kornelius2020-09-282020-09-282020https://doi.org/10.34657/4365https://oa.tib.eu/renate/handle/123456789/5736The intrinsic stress behavior and microstructure evolution of Molybdenum thin films were investigated to evaluate their applicability as a metallization in high temperature microelectronic devices. For this purpose, 100 nm thick Mo films were sputter-deposited without or with an AlN or SiO2 cover layer on thermally oxidized Si substrates. The samples were subjected to thermal cycling up to 900 °C in ultrahigh vacuum; meanwhile, the in-situ stress behavior was monitored by a laser based Multi-beam Optical Sensor (MOS) system. After preannealing at 900 °C for 24 h, the uncovered films showed a high residual stress at room temperature and a plastic behavior at high temperatures, while the covered Mo films showed an almost entirely elastic deformation during the thermal cycling between room temperature and 900 °C with hardly any plastic deformation, and a constant stress value during isothermal annealing without a notable creep. Furthermore, after thermal cycling, the Mo films without as well as with a cover layer showed low electrical resistivity (≤10 μΩ·cm).enghttps://creativecommons.org/licenses/by/4.0/620molybdenum thin filmshigh-temperature behaviorintrinsic stressArticle