CC BY-NC-SA 3.0 UnportedShuai, Y.Ou, X.Luo, W.Mücklich, A.Bürger, D.Zhou, S.Wu, C.Chen, Y.Zhang, W.Helm, M.Mikolajick, T.Schmidt, O.G.Schmidt, H.2020-11-202020-11-202013https://doi.org/10.34657/4599https://oa.tib.eu/renate/handle/123456789/5970This work reports the effect of Ti diffusion on the bipolar resistive switching in Au/BiFeO 3/Pt/Ti capacitor-like structures. Polycrystalline BiFeO 3 thin films are deposited by pulsed laser deposition at different temperatures on Pt/Ti/SiO 2/Si substrates. From the energy filtered transmission electron microscopy and Rutherford backscattering spectrometry it is observed that Ti diffusion occurs if the deposition temperature is above 600 C. The current-voltage (I-V) curves indicate that resistive switching can only be achieved in Au/BiFeO 3/Pt/Ti capacitor-like structures where this Ti diffusion occurs. The effect of Ti diffusion is confirmed by the BiFeO 3 thin films deposited on Pt/sapphire and Pt/Ti/sapphire substrates. The resistive switching needs no electroforming process, and is incorporated with rectifying properties which is potentially useful to suppress the sneak current in a crossbar architecture. Those specific features open a promising alternative concept for nonvolatile memory devices as well as for other memristive devices like synapses in neuromorphic circuits.enghttps://creativecommons.org/licenses/by-nc-sa/3.0/620Ti diffusionbipolar resistive switchingBiFeO3 thin filmsArticle