CC BY 4.0 UnportedNiu, GangCalka, PaulineHuang, PengSharath, Sankaramangalam UlhasPetzold, StefanGloskovskii, AndreiFröhlich, KarolZhao, YudiKan, JinfengSchubert, Markus AndreasBärwolf, FlorianRen, WeiYe, Zuo-GuangPerez, EduardoWenger, ChristianAlff, LambertSchroeder, Thomas2021-11-242021-11-242019https://oa.tib.eu/renate/handle/123456789/7411https://doi.org/10.34657/6458The HfO2-based resistive random access memory (RRAM) is one of the most promising candidates for non-volatile memory applications. The detection and examination of the dynamic behavior of oxygen ions/vacancies are crucial to deeply understand the microscopic physical nature of the resistive switching (RS) behavior. By using synchrotron radiation based, non-destructive and bulk-sensitive hard X-ray photoelectron spectroscopy (HAXPES), we demonstrate an operando diagnostic detection of the oxygen ‘breathing’ behavior at the oxide/metal interface, namely, oxygen migration between HfO2 and TiN during different RS periods. The results highlight the significance of oxide/metal interfaces in RRAM, even in filament-type devices. IMPACT STATEMENT: The oxygen ‘breathing’ behavior at the oxide/metal interface of filament-type resistive random access memory devices is operandoly detected using hard X-ray photoelectron spectroscopy as a diagnostic tool. © 2019, © 2019 The Author(s). Published by Informa UK Limited, trading as Taylor & Francis Group.enghttps://creativecommons.org/licenses/by/4.0/530600670HAXPESHfO2interfaceresistive switchingRRAMArticle