CC BY 4.0 UnportedLuongo, GiuseppeGrillo, AlessandroGiubileo, FilippoIemmo, LauraLukosius, MindaugasChavarin, Carlos AlvaradoWenger, ChristianDi Bartolomeo, Antonio2021-11-252021-11-252019https://oa.tib.eu/renate/handle/123456789/7481https://doi.org/10.34657/6528A graphene/silicon junction with rectifying behaviour and remarkable photo-response was fabricated by transferring a graphene monolayer on a pillar-patterned Si substrate. The device forms a 0.11 eV Schottky barrier with 2.6 ideality factor at room temperature and exhibits strongly biasand temperature-dependent reverse current. Below room temperature, the reverse current grows exponentially with the applied voltage because the pillar-enhanced electric field lowers the Schottky barrier. Conversely, at higher temperatures, the charge carrier thermal generation is dominant and the reverse current becomes weakly bias-dependent. A quasi-saturated reverse current is similarly observed at room temperature when the charge carriers are photogenerated under light exposure. The device shows photovoltaic effect with 0.7% power conversion efficiency and achieves 88 A/W photoresponsivity when used as photodetector. © 2019 by the authors.enghttps://creativecommons.org/licenses/by/4.0/570540DiodeGrapheneHeterojunctionMOS (Metal Oxide Semiconductor) capacitorPhotodetectorResponsivitySchottky barrierArticle