This document may be downloaded, read, stored and printed for your own use within the limits of § 53 UrhG but it may not be distributed via the internet or passed on to external parties.Dieses Dokument darf im Rahmen von § 53 UrhG zum eigenen Gebrauch kostenfrei heruntergeladen, gelesen, gespeichert und ausgedruckt, aber nicht im Internet bereitgestellt oder an Außenstehende weitergegeben werden.Maltsi, AniezaNiermann, ToreStreckenbach, TimoTabelow, KarstenKoprucki, Thomas2022-06-302022-06-302020https://oa.tib.eu/renate/handle/123456789/9332https://doi.org/10.34657/8370We present a mathematical model and a tool chain for the numerical simulation of TEM images of semiconductor quantum dots (QDs). This includes elasticity theory to obtain the strain profile coupled with the Darwin-Howie-Whelan equations, describing the propagation of the electron wave through the sample. We perform a simulation study on indium gallium arsenide QDs with different shapes and compare the resulting TEM images to experimental ones. This tool chain can be applied to generate a database of simulated TEM images, which is a key element of a novel concept for model-based geometry reconstruction of semiconductor QDs, involving machine learning techniques.eng510Semiconductorsquantum dotsTEM imageselectron wave propagationstrainNumerical simulation of TEM images for In(Ga)As/GaAs quantum dots with various shapesReport10 S.