CC BY 3.0 UnportedHu, K.Herzel, F.Scheytt, J.C.2018-04-272019-06-282009https://doi.org/10.34657/4857https://oa.tib.eu/renate/handle/123456789/1332In this paper a low-power low-phase-noise voltage-controlled-oscillator (VCO) has been designed and, fabricated in 0.25 μm SiGe BiCMOS process. The resonator of the VCO is implemented with on-chip MIM capacitors and a single aluminum bondwire. A tail current filter is realized to suppress flicker noise up-conversion. The measured phase noise is −126.6 dBc/Hz at 1 MHz offset from a 7.8 GHz carrier. The figure of merit (FOM) of the VCO is −192.5 dBc/Hz and the VCO core consumes 4 mA from a 3.3 V power supply. To the best of our knowledge, this is the best FOM and the lowest phase noise for bondwire VCOs in the X-band. This VCO will be used for satellite communications.application/pdfenghttps://creativecommons.org/licenses/by/3.0/620Bond-wire inductorsFigure of merit (FOM)Flicker noiseLow-phase-noiseMIM capacitorsSatellite communicationsSige bicmos processVoltage-controlled-oscillatorArticle