CC BY 4.0 UnportedChabak, Kelson D.Moser, NeilGreen, Andrew J.Walker, Dennis E.Tetlak, Stephen E.Heller, EricCrespo, AntonioFitch, RobertMcCandless, Jonathan P.Leedy, KevinBaldini, MicheleWagner, GunterGalazka, ZbigniewLi, XiulingJessen, Gregg2022-05-182022-05-182016https://oa.tib.eu/renate/handle/123456789/8984https://doi.org/10.34657/8022Sn-doped gallium oxide (Ga2O3) wrap-gate fin-array field-effect transistors (finFETs) were formed by top-down BCl3 plasma etching on a native semi-insulating Mg-doped (100) β-Ga2O3 substrate. The fin channels have a triangular cross-section and are approximately 300 nm wide and 200 nm tall. FinFETs, with 20 nm Al2O3 gate dielectric and ∼2 μm wrap-gate, demonstrate normally-off operation with a threshold voltage between 0 and +1 V during high-voltage operation. The ION/IOFF ratio is greater than 105 and is mainly limited by high on-resistance that can be significantly improved. At VG = 0, a finFET with 21 μm gate-drain spacing achieved a three-terminal breakdown voltage exceeding 600 V without a field-plate.enghttps://creativecommons.org/licenses/by/4.0/530AluminaAluminum oxideBoron compoundsChlorine compoundsElectric breakdownFinFETFins (heat exchange)Gate dielectricsHeterojunction bipolar transistorsHigh electron mobility transistorsMagnesium compoundsPlasma etchingSemiconductor junctionsThreshold voltageTin compoundsEnhancement modesFin field effect transistorsGallium oxidesHigh breakdown voltageHigh-voltage operationOn-resistanceSemi-insulatingTriangular cross-sectionsGallium compoundsArticle