CC BY 4.0 UnportedBoy, JohannesHandwerg, MartinMitdank, RüdigerGalazka, ZbigniewFischer, Saskia F.2021-08-312021-08-312020https://oa.tib.eu/renate/handle/123456789/6642https://doi.org/10.34657/5689The temperature dependence of the charge carrier density, mobility, and Seebeck coefficient of melt-grown, bulk ZnGa2O4 single crystals was measured between 10 K and 310 K. The electrical conductivity at room temperature is about σ = 286 S/cm due to a high electron concentration of n = 3.26 × 1019 cm−3 caused by unintentional doping. The mobility at room temperature is μ = 55 cm2/V s, whereas the scattering on ionized impurities limits the mobility to μ = 62 cm2/Vs for temperatures lower than 180 K. The Seebeck coefficient relative to aluminum at room temperature is SZnGa2O4−Al = (−125 ± 2) μV/K and shows a temperature dependence as expected for degenerate semiconductors. At low temperatures, around 60 K, we observed the maximum Seebeck coefficient due to the phonon drag effect. © 2020 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/).enghttps://creativecommons.org/licenses/by/4.0/530Carrier concentrationCrystal impuritiesGallium compoundsHall mobilitySeebeck coefficientSemiconductor dopingSingle crystalsTemperature distributionZinc compoundsDegenerate semiconductorsElectrical conductivityHigh electron concentrationIonized impuritiesLow temperaturesPhonon drag effectsTemperature dependenceUnintentional dopingHole mobilityArticle