CC BY-NC-ND 3.0 UnportedWang, MinFu, LeiGan, LinZhang, ChaohuaRümmeli, MarkBachmatiuk, AlicjaFang, YingLiu, Zhongfan2018-07-262019-06-282013https://doi.org/10.34657/4995https://oa.tib.eu/renate/handle/123456789/1506Current etching routes to process large graphene sheets into nanoscale graphene so as to open up a bandgap tend to produce structures with rough and disordered edges. This leads to detrimental electron scattering and reduces carrier mobility. In this work, we present a novel yet simple direct-growth strategy to yield graphene nanomesh (GNM) on a patterned Cu foil via nanosphere lithography. Raman spectroscopy and TEM characterizations show that the as-grown GNM has significantly smoother edges than post-growth etched GNM. More importantly, the transistors based on as-grown GNM with neck widths of 65-75 nm have a near 3-fold higher mobility than those derived from etched GNM with the similar neck widths.application/mswordapplication/pdfenghttps://creativecommons.org/licenses/by-nc-nd/3.0/620Electronic devicesElectronic materialsElectronic properties and materialsSynthesis of grapheneArticle