CC BY 3.0 UnportedWilkens, H.Spieß, W.Zoellner, M.H.Niu, G.Schroeder, T.Wollschläger, J.2022-06-272022-06-272015https://oa.tib.eu/renate/handle/123456789/9290https://doi.org/10.34657/8328In this work the structural and morphological changes of Ce1−xPrxO2−δ (x = 0.20, 0.35 and 0.75) films grown on Si(111) due to post deposition annealing are investigated by low energy electron diffraction combined with a spot profile analysis. The surface of the oxide films exhibit mosaics with large terraces separated by monoatomic steps. It is shown that the Ce/Pr ratio and post deposition annealing temperature can be used to tune the mosaic spread, terrace size and step height of the grains. The morphological changes are accompanied by a phase transition from a fluorite type lattice to a bixbyite structure. Furthermore, at high PDA temperatures a silicate formation via a polycrystalline intermediate state is observed.enghttps://creativecommons.org/licenses/by/3.0/540Article