CC BY-NC-SA 3.0 UnportedCalarco, R.2020-09-252020-09-252012https://doi.org/10.34657/4328https://oa.tib.eu/renate/handle/123456789/5699An overview on InN nanowires, fabricated using either a catalyst-free molecular beam epitaxy method or a catalyst assisted chemical vapor deposition process, is provided. Differences and similarities of the nanowires prepared using the two techniques are presented. The present understanding of the growth and of the basic optical and transport properties is discussed.enghttps://creativecommons.org/licenses/by-nc-sa/3.0/620Electrical propertiesIII-VMolecular beam epitaxy (MBE)NanoscaleOptical propertiesOptoelectronicPhotoconductivitySelf-assembly semiconductingCatalyst-freeChemical vapor deposition processIII-VInN NanowiresNano scaleOptoelectronicOptoelectronic propertiesCatalystsChemical vapor depositionEpitaxial growthMolecular beam epitaxyNanowiresOptical propertiesPhotoconductivitySelf assemblyTransport propertiesElectric propertiesArticle