CC BY 4.0 UnportedHilmi, IsomLotnyk, AndriyGerlach, Jürgen W.Schumacher, PhilippRauschenbach, Bernd2023-02-282023-02-282017https://oa.tib.eu/renate/handle/123456789/11560http://dx.doi.org/10.34657/10594An attempt to deposit a high quality epitaxial thin film of a two-dimensionally bonded (layered) chalcogenide material with van-der-Waals (vdW) epitaxy is of strong interest for non-volatile memory application. In this paper, the epitaxial growth of an exemplary layered chalcogenide material, i.e., stoichiometric Sb2Te3 thin films, is reported. The films were produced on unreconstructed highly lattice-mismatched Si(111) substrates by pulsed laser deposition (PLD). The films were grown by vdW epitaxy in a two-dimensional mode. X-ray diffraction measurements and transmission electron microscopy revealed that the films possess a trigonal Sb2Te3 structure. The single atomic Sb/Te termination layer on the Si surface was formed initializing the thin film growth. This work demonstrates a straightforward method to deposit vdW-epitaxial layered chalcogenides and, at the same time, opens up the feasibility to fabricate chalcogenide vdW heterostructures by PLD.enghttps://creativecommons.org/licenses/by/4.0620600AntimonyChalcogenidesData storage equipmentDepositionDepositsDigital storageFilm growthHigh resolution transmission electron microscopyInorganic compoundsPulsed laser depositionPulsed lasersThin filmsTransmission electron microscopyVan der Waals forcesX ray diffractionArticle