CC BY 4.0 UnportedSteglich, PatrickBondarenko, SiegfriedMai, ChristianPaul, MartinWeller, Michael G.Mai, Andreas2021-11-152021-11-152020https://oa.tib.eu/renate/handle/123456789/7283https://doi.org/10.34657/6330Silicon photonic sensors are promising candidates for lab-on-a-chip solutions with versatile applications and scalable production prospects using complementary metal-oxide semiconductor (CMOS) fabrication methods. However, the widespread use has been hindered because the sensing area adjoins optical and electrical components making packaging and sensor handling challenging. In this work, a local back-side release of the photonic sensor is employed, enabling a separation of the sensing area from the rest of the chip. This approach allows preserving the compatibility of photonic integrated circuits in the front-end of line and metal interconnects in the back-end of line. The sensor is based on a micro-ring resonator and is fabricated on wafer-level using a CMOS technology. We revealed a ring resonator sensitivity for homogeneous sensing of 106 nm/RIU. © 1989-2012 IEEE.enghttps://creativecommons.org/licenses/by/4.0/620integrated photonicsphotonic biosensorrefractive index sensingSilicon photonic sensorsilicon photonicsArticle