This document may be downloaded, read, stored and printed for your own use within the limits of § 53 UrhG but it may not be distributed via the internet or passed on to external parties.Dieses Dokument darf im Rahmen von § 53 UrhG zum eigenen Gebrauch kostenfrei heruntergeladen, gelesen, gespeichert und ausgedruckt, aber nicht im Internet bereitgestellt oder an Außenstehende weitergegeben werden.Radziunas, Mindaugas2016-12-142019-06-2820162198-5855https://doi.org/10.34657/2661https://oa.tib.eu/renate/handle/123456789/2912We present a (2+1)-dimensional partial differential equation model for spatial-lateral dynamics of edge-emitting broad-area semiconductor devices and several extensions of this model describing different physical effects. MPI-based parallelization of the resulting middlesize numerical problem is implemented and tested on the blade cluster and separate multi-core computers at the Weierstrass Institute in Berlin. It was found, that an application of 25-30 parallel processes on all considered platforms was guaranteeing a nearly optimal performance of the algorithm with the speedup around 20-25 and the efficiency of 0.7-0.8. It was also shown, that a simultaneous usage of several in-house available multi-core computers allows a further increase of the speedup without a significant loss of the efficiency. Finally, an importance of the considered problem and the efficient numerical simulations of this problem were illustrated by a few examples occurring in real world applications.application/pdfeng510Traveling wave modelnumerical schemesimulationsparallel computationsMPIsemiconductor devicebroad areaReport