CC BY 4.0 UnportedHossain, MarufStoppel, DimitriBoppel, SebastianHeinrich, WolfgangKrozer, Viktor2021-11-242021-11-242020https://oa.tib.eu/renate/handle/123456789/7453https://doi.org/10.34657/6500A fundamental up-converter with high linearity is presented, realized as full Gilbert cell (GC) mixer using a 800 nm transferred substrate (TS) InP-DHBT technology. The LO input of the Gilbert cell conducts from 75 to 100 GHz and requires 5 dBm of input power. The GC attains a single sideband (SSB) conversion gain of 10 ± 1 dB within the frequency from 82 to 95 GHz with a saturated output power of -1 dBm at 86 GHz and >5 dB conversion gain between 75 and 100 GHz. The up-converter exhibits 25 GHz of IF bandwidth. The DC power consumption is only 51 mW. © 2020 The Authors. Microwave and Optical Technology Letters published by Wiley Periodicals, Inc.enghttps://creativecommons.org/licenses/by/4.0/620Gilbert cell (GC) mixerindium phosphide double heterojunction bipolar transistor (DHBT)Local oscillator (LO)lower side band (LSB)single sideband (SSB)transferred-substrate (TS) processupper side band (USB)Article