Dieses Dokument darf im Rahmen von § 53 UrhG zum eigenen Gebrauch kostenfrei heruntergeladen, gelesen, gespeichert und ausgedruckt, aber nicht im Internet bereitgestellt oder an Außenstehende weitergegeben werden.This document may be downloaded, read, stored and printed for your own use within the limits of § 53 UrhG but it may not be distributed via the internet or passed on to external parties.Fischer, AxelPahner, PaulLüssem, BjörnScholz, ReinhardKoprucki, ThomasGärtner, KlausGlitzky, Annegret2016-03-242019-06-2820120946-8633https://doi.org/10.34657/3153https://oa.tib.eu/renate/handle/123456789/3214We demonstrate electric bistability induced by the positive feedback of self-heating onto the thermally activated conductivity in a two-terminal device based on the organic semiconductor C60. The central undoped layer with a thickness of 200 nm is embedded between thinner n-doped layers adjacent to the contacts minimizing injection barriers. The observed current-voltage characteristics follow the general theory for thermistors described by an Arrhenius-like conductivity law. Our findings including hysteresis phenomena are of general relevance for the entire material class since most organic semiconductors can be described by a thermally activated conductivity.application/pdfeng510Organic semiconductorC60Joule self-heatingS-shaped negative differential resistance (SNDR)thermal switchingbistabilityhysteresisArrhenius-like conductivity lawReport