CC BY-NC-ND 4.0 UnportedHagedorn, SylviaWalde, SebastianKnauer, ArneSusilo, NormanPacak, DanielCancellara, LeonardoNetzel, CarstenMogilatenko, AnnaHartmann, CarstenWernicke, TimKneissl, MichaelWeyers, Markus2021-08-182021-08-182020https://oa.tib.eu/renate/handle/123456789/6499https://doi.org/10.34657/5546Herein, the scope is to provide an overview on the current status of AlN/sapphire templates for ultraviolet B (UVB) and ultraviolet C (UVC) light-emitting diodes (LEDs) with focus on the work done previously. Furthermore, approaches to improve the properties of such AlN/sapphire templates by the combination of high-temperature annealing (HTA) and patterned AlN/sapphire interfaces are discussed. While the beneficial effect of HTA is demonstrated for UVC LEDs, the growth of relaxed AlGaN buffer layers on HTA AlN is a challenge. To achieve relaxed AlGaN with a low dislocation density, the applicability of HTA for AlGaN is investigated. © 2020 The Authors. Published by WILEY-VCH Verlag GmbH & Co. KGaA, Weinheimenghttps://creativecommons.org/licenses/by-nc-nd/4.0/530AlGaNAlNepitaxial lateral overgrowthshigh-temperature annealingnanopatterned sapphiresultraviolet light-emitting diodesArticle