CC BY-NC-SA 3.0 UnportedHerklotz, AndreasBiegalski, Michael D.Kim, Hyun-SikSchultz, LudwigDörr, KathrinChristen, Hans M.2018-06-122019-06-282010https://doi.org/10.34657/1710https://oa.tib.eu/renate/handle/123456789/4379The dielectric diamagnetic LaAl1− xScxO3 (LASO) (x=0–1) is proposed for adjusting of the biaxial in-plane lattice parameter of oxide substrates in the wide range from 3.79 to 4.05 Å (6.5%). This range includes the pseudocubic lattice parameters of most of the currently investigated complex oxides. The in-plane lattice parameter of strain-relaxed LASO films depends linearly on the composition, and these films grow with a smooth surface. On several different LASO-buffered substrates, ferromagnetic La0.7Sr0.3MnO3 (LSMO) films have been grown in predetermined strain states. A series of 30 nm thick LSMO films on LASO-buffered LaSrAlO4(001) demonstrates that continuously controlled coherent strains in a wide range, in this case from − 1 to +0.6%, can be obtained for the functional oxide films grown on LASO.application/pdfenghttps://creativecommons.org/licenses/by-nc-sa/3.0/530Buffered substratesCoherent strainComplex oxidesFunctional oxide filmsIn-plane lattice parametersLattice parametersLSMO filmsOxide substratesPseudocubicSmooth surfaceStrain stateStrain-relaxedTemplate filmsTunabilitiesArticle