CC BY 4.0 UnportedPolkowski, WojciechSobczak, NataliaBruzda, GrzegorzNowak, RafałGiuranno, DonatellaKudyba, ArturPolkowska, AdelajdaPajor, KrzysztofKozieł, TomaszKaban, Ivan2021-08-242021-08-242019https://oa.tib.eu/renate/handle/123456789/6581https://doi.org/10.34657/5628In this work, the effect of boron content on the high-temperature wetting behavior in the Si-B alloy/h-BN systems was experimentally examined. For this reason, hypoeutectic, eutectic and hypereutectic Si-B alloys (Si-1B, Si-3.2B and Si-5.7B wt.%, respectively) were produced by electric arc melting method and then subjected to sessile drop/contact heating experiments with polycrystalline h-BN substrates, at temperatures up to 1750 °C. Similar to pure Si/h-BN system, wetting kinetics curves calculated on a basis of in situ recorded drop/substrate images point toward non-wetting behavior of all selected Si-B alloy/h-BN couples. The highest contact angle values of ~ 150° were obtained for hypoeutectic and eutectic Si-B alloys in the whole examined temperature range. © 2018, The Author(s).enghttps://creativecommons.org/licenses/by/4.0/620660670AMADEUS projecthexagonal boron nitriderefractoriessilicon–boron alloysthermal energy storageArticle