CC BY 2.0 UnportedDubslaff, MartinHanke, MichaelPatommel, JensHoppe, RobertSchroer, Christian G.Schöder, SebastianBurghammer, Manfred2019-03-222019-06-282012https://doi.org/10.34657/1651https://oa.tib.eu/renate/handle/123456789/4196An enhancement on the method of X-ray diffraction simulations for applications using nanofocused hard X-ray beams is presented. We combine finite element method, kinematical scattering calculations, and a spot profile of the X-ray beam to simulate the diffraction of definite parts of semiconductor nanostructures. The spot profile could be acquired experimentally by X-ray ptychography. Simulation results are discussed and compared with corresponding X-ray nanodiffraction experiments on single SiGe dots and dot molecules.application/pdfenghttps://creativecommons.org/licenses/by/2.0/530Quantum dotsQuantum dot moleculesX-ray nanodiffractionX-ray scattering simulation68.65.Hb61.05.C-Article