Dieses Dokument darf im Rahmen von § 53 UrhG zum eigenen Gebrauch kostenfrei heruntergeladen, gelesen, gespeichert und ausgedruckt, aber nicht im Internet bereitgestellt oder an Außenstehende weitergegeben werden.This document may be downloaded, read, stored and printed for your own use within the limits of § 53 UrhG but it may not be distributed via the internet or passed on to external parties.Vladimirov, AndreiLefever, RenéTlidi, Mustapha2016-03-242019-06-2820100946-8633https://doi.org/10.34657/3083https://oa.tib.eu/renate/handle/123456789/2306The performance of a multisection DBR semiconductor laser emitting around 1060 nm is experimentally and theoretically investigated. Simulations and mode analysis of the traveling wave model including temperature induced changes of the refractive index explain experimentally observed nearly-periodic transitions between neighboring cavity mode determined continuous wave states with increasing injection current.application/pdfeng510Localized structuresLyapunov functionalstabilityReport