CC BY 4.0 UnportedLiddy, Kyle J.Green, Andrew J.Hendricks, Nolan S.Heller, Eric R.Moser, Neil A.Leedy, Kevin D.Popp, AndreasLindquist, Miles T.Tetlak, Stephen E.Wagner, Günter2021-10-202021-10-202019https://oa.tib.eu/renate/handle/123456789/7064https://doi.org/10.34657/6111We report the first demonstration of self-aligned gate (SAG) β-Ga2O3 metal-oxide-semiconductor field-effect transistors (MOSFETs) as a path toward eliminating source access resistance for low-loss power applications. The SAG process is implemented with a subtractively defined and etched refractory metal, such as Tungsten, combined with ion-implantation. We report experimental and modeled DC performance of a representative SAG device that achieved a maximum transconductance of 35 mS mm-1 and an on-resistance of ∼30 Ω mm with a 2.5 μm gate length. These results highlight the advantage of implant technology for SAG β-Ga2O3 MOSFETs enabling future power switching and RF devices with low parasitic resistance. © Not subject to copyright in the USA. Contribution of Wright-Patterson AFB.enghttps://creativecommons.org/licenses/by/4.0/530Gallium compoundsMOS devicesOxide semiconductorsRefractory materialsRefractory metalsAccess resistanceDC performanceImplant technologyLow-parasiticMaximum transconductanceOn-resistancePower switchingSelf-aligned gatePower MOSFETArticle