CC BY 4.0 UnportedPaik, HanjongChen, ZhenLochocki, EdwardSeidner H., ArielVerma, AmitTanen, NicholasPark, JisungUchida, MasakiShang, ShunLiZhou, Bi-ChengBrützam, MarioUecker, ReinhardLiu, Zi-KuiJena, DebdeepShen, Kyle M.Muller, David A.Schlom, Darrell G.2023-03-062023-03-062017https://oa.tib.eu/renate/handle/123456789/11664http://dx.doi.org/10.34657/10697Epitaxial La-doped BaSnO3 films were grown in an adsorption-controlled regime by molecular-beam epitaxy, where the excess volatile SnOx desorbs from the film surface. A film grown on a (001) DyScO3 substrate exhibited a mobility of 183 cm2 V-1 s-1 at room temperature and 400 cm2 V-1 s-1 at 10 K despite the high concentration (1.2 × 1011 cm-2) of threading dislocations present. In comparison to other reports, we observe a much lower concentration of (BaO)2 Ruddlesden-Popper crystallographic shear faults. This suggests that in addition to threading dislocations, other defects - possibly (BaO)2 crystallographic shear defects or point defects - significantly reduce the electron mobility.enghttps://creativecommons.org/licenses/by/4.0/620600Dysprosium compoundsEpitaxial growthLanthanum compoundsMolecular beam epitaxyMolecular beamsPoint defectsScandium compoundsSingle crystalsTin compoundsArticle