CC BY 2.0 UnportedHarazim, S.M.Feng, P.Sanchez, S.Deneke, C.Mei, Y.Schmidt, O.G.2020-09-292020-09-292011https://doi.org/10.34657/4386https://oa.tib.eu/renate/handle/123456789/5757Self-organized wrinkling of pre-strained nanomembranes into nanochannels is used to fabricate a fully integrated nanofluidic device for the development of ion field effect transistors (IFETs). Constrained by the structure and shape of the membrane, the deterministic wrinkling process leads to a versatile variation of channel types such as straight two-way channels, three-way branched channels, or even four-way intersection channels. The fabrication of straight channels is well controllable and offers the opportunity to integrate multiple IFET devices into a single chip. Thus, several IFETs are fabricated on a single chip using a III-V semiconductor substrate to control the ion separation and to measure the ion current of a diluted potassium chloride electrolyte solution.enghttps://creativecommons.org/licenses/by/2.0/620Chlorine compoundsElectrolytesIII-V semiconductorsIonsNanostructuresPotashPotassium chlorideSubstratesChlorine compoundsIonsNanostructuresTransistorsChloride electrolytesFully integratedIon separationNano channelsNano-fluidic devicesNanomembranesSemiconductor substrateStraight channelFully integratedII-IV semiconductorsIon currentsIon separationNano channelsNano-fluidic devicesNanomembranesOn chipsPotassium chlorideSingle chipsStraight channelField effect transistorsField effect transistorsIntegrated sensitive on-chip ion field effect transistors based on wrinkled ingaas nanomembranesArticle